Microsemi Corporation MRF581, MRF581A Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Noise - 2.5 dB @ 500 MHZ
• High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
MRF581/MRF581A
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter MRF581 MRF581A Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 18 15 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 2.5 Vdc
Collector Current 200 mA
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
2.5
25
1.25
10
-65 to +150
Watts
mW/ ºC
Watts
mW/ ºC
ºC
T
Jmax
MSC1318.PDF 10-25-99
Maximum Junction Temperature
150
ºC
MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage MRF581
(IC = 5.0 mAdc, IB = 0) MRF581A
BVCBO Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc
ICBO Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA
IEBO Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA
18
15 - - Vdc
(on)
DYNAMIC
HFE DC Current Gain MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc) MRF581A
Symbol Test Conditions Value
COB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ftau Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
50
90 -
Min. Typ. Max. Unit
-
-
2.0 3.0 pF
5.0 - GHz
200
250
-
MSC1318.PDF 10-25-99
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