Microsemi Corporation MRF559 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = .5 W
• Minimum Gain = 8.0 dB
• Efficiency 50%
• Cost Effective Macro X Package
• Electroless Tin Plated Leads for Improved Solderability
MRF559
Macro X
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 16 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 150 mA
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
Storage Temperature Range
2.0
20
-65 to +150
Watts
mW/ ºC
ºC
MSC1317.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 16 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IB = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
MRF559
(on)
DYNAMIC
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 1.0 mA
HFE DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc) 30 - 200
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
-
2.5 3.0 pF
-
MSC1317.PDF 10-25-99
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