Microsemi Corporation MRF555, MRF555T Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 470 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
MRF555
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 16 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 500 mA
Thermal Data
P
D
MSC1316.PDF 10-25-99
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)
STATIC
Symbol Test Conditions Value
BV
CEO
Collector-Emitter Breakdown Voltage
(IC = 5 mAdc, IB = 0)
MRF555
Min. Typ. Max. Unit
16 - - Vdc
BV
BV
I
CES
HFE
CES
EBO
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 100 mA, VCE = 5.0 Vdc) Both 50 - 200
30 - - Vdc
3.0 - - Vdc
- - 5 mA
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
C
OB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
-
--- 5.5 pF
MSC1316.PDF 10-25-99
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