Microsemi Corporation MRF553 Datasheet
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 175 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11.5 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF553
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 16 Vdc
Collector-Base Voltage 36 Vdc
Emitter-Base Voltage 4.0 Vdc
Collector Current 500 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
MSC1316.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0) 16 - - Vdc
BVCES Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0) 36 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IE = 0, IC = 5 mAdc) 36 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 1 mAdc, IC = 0) 4.0 - - Vdc
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 5 mA
MRF553
(on)
DYNAMIC
HFE DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc) Both 30 - 200
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
12 20 pF
-
MSC1316.PDF 10-25-99
Loading...