Microsemi Corporation MRF517 Datasheet

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• Gpe = 10 dB (typ) @ 60 mA, 300 MHz

• 3 GHz Current-Gain Bandwidth Product (min) @ 60mA

• Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

MRF517

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre­driver, driver, and output stages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 20 Vdc
VCBO Collector-Base Voltage 35 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc

IC Collector Current 150 mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC
Derate above 25ºC

2.5

0.02

Watts

mW/ ºC

MSC1302.PDF 10-25-99

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC
(off)

Symbol Test Conditions Value

Min. Typ. Max. Unit

BVCER Collector-Emitter Breakdown Voltage

(IC = 5.0 mAdc, RBE = 330 ohms) 25 - - Vdc

BVCEO Collector-Emitter Breakdown Voltage

(IC=5.0 mAdc, IB=0) 20 - - Vdc

BVCBO Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

BVEBO Emitter-Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

ICEO Collector Cutoff Current

(VCE = 15 Vdc, IB = 0) - - 100

30 - - Vdc

3.0 - - Vdc

MRF517

µAdc

(on)

DYNAMIC

HFE DC Current Gain

(IC = 60 mAdc, VCE = 10 Vdc) 50 - 150

Symbol Test Conditions Value

Min. Typ. Max. Unit

f

T

C

ob

Current-Gain - Bandwidth Product
(IC = 60 mAdc, VCE = 15 Vdc, f = 200 MHz) 3 4 - GHz

Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

-

3.0 4.5 pF

-

MSC1302.PDF 10-25-99