Microsemi Corporation MRF4427R2, MRF4427, MRF4427R1 Datasheet
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF4427, R1, R2
• Low Voltage Version of MRF3866
• Maximum Available Gain – 20dB(typ) @ 200MHz
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 20 Vdc
Collector-Base Voltage 40 Vdc
Emitter-Base Voltage 2.0 Vdc
Collector Current 400 mA
Thermal Data
P
D
T
stg
R
θJA
MSC1313.PDF 10-25-99
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Temperature
Thermal Resistance, Junction to Ambient
1.5
12.5
-65 to + 150 ºC
125 ºC/W
Watts
mW/ ºC
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 20 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 40 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.0 - - Vdc
ICEO Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc) - - .02 mA
(on)
HFE DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 360 mAdc, VCE = 5 Vdc)
10
5.0
MRF4427, R1, R2
-
-
200
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mA) 60 -
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
Cob Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
-
-
mVdc
1.3 - GHz
- 3.4 GHz
MSC1313.PDF 10-25-99
Loading...