Microsemi Corporation MRF3866R2, MRF3866R1, MRF3866 Datasheet
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF3866, R1, R2
• Maximum Available Gain = 17 dB @ 300 MHz
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 30 Vdc
Collector-Base Voltage 55 Vdc
Emitter-Base Voltage 3.5 Vdc
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
1.0
8
Watts
mW/ ºC
MSC1312.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCER Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0, rbe = 10 Ohms) 55 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 55 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc
ICEO Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - .02 mA
(on)
MRF3866, R1, R2
Min. Typ. Max. Unit
HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
5.0
10
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Ftau Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
-
800
-
-
1.6 2.0 pF
1000 - MHz
250
200
MSC1312.PDF 10-25-99
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