Microsemi Corporation MRF1001A Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
MRF1001A
G
•
U max = 11.5 dB (typ) @ 300 MHz, 14v, 90mA
• |S
2
|
= 11 dB (typ) @ 300 MHz, 14v, 90mA
21
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter 20 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 3.5 Vdc
Collector Current 200 mA
Thermal Data
P
D
MSC1311.PDF 10-25-99
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ ºC
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc) 20 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IC= 0.1 mAdc) 3.5 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC=1.0 mAdc) 30 - -
ICBO Collector-Base
(VCB = 10 Vdc) - 50 -
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 50mA, IC/IB = 10) - 100 -
MRF1001A
Vdc
µA
mV
(on)
DYNAMIC
HFE DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc) 50 - 300
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
Current-Gain - Bandwidth Product
(IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz) - 3.0 - GHz
-
MSC1311.PDF 10-25-99
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