Microsemi Corporation MM002-06, MM002-10U, MM002-06U, MM002-08, MM002-08U Datasheet

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2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
Features
Available in standard switching (low VF) as MM002-xx or ultrafast switching as MM002-xxU
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T” suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
600- 800 -1000 Volts
Maximum Ratings per leg @ 25°C (unless otherwise specified)
PART NUMBER MM002-06 MM002-08 MM002-10
MM002-XX
SERIES
150 Amps
80 nsec to 5 µsec
3 PHASE DIODE
BRIDGE
Peak Repetitive Reverse Voltage, V Peak Working Reverse Voltage, V DC Reverse Blocking Voltage, V Average Forward Current, I Non-Repetitive Peak Surge Current, I MM002-XXU Operating and Storage Junction Temperature Range
Thermal resistance, junction to base per diode per module
O
R
RRM
RWM
MM002-XX
FSM
600 V 800 V 1000 V
50 A 50 A 50 A 350 A 200 A
-55°C to +175°C
1.5°C/W max 1°C/W typ.
0.3°C/W max.
350 A 175 A
-55°C to +175°C
1.5°C/W max 1°C/W typ.
0.3°C/W max.
1.5°C/W max
0.3°C/W max
Mechanical Outline
350 A 175 A
-55°C to +175°C
1°C/W typ.
Datasheet# MSC0325A
MM002-XX
SERIES
Electrical Parameters per leg @ 25°C (unless otherwise specified)
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse Current, MM002-06 MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U Reverse Current, MM002-06 MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U
Forward Voltage, MM002-06 MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U Forward Voltage, MM002-06 MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U Forward Voltage, MM002-06 MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U Reverse Recovery MM002-06 Time MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U Junction MM002-06 Capacitance MM002-08 MM002-10 MM002-06U MM002-08U MM002-10U
Notes
(1) Pulse test, t 300 µs, duty cycle δ 2%
I
R1
I
R2
V
F1
VR= 600 V VR= 800 V VR= 1000 V VR= 600 V VR= 800 V VR= 1000 V
VR= 600 V, TA= 100 °C VR= 800 V, TA= 100 °C VR= 1000 V, TA= 100 °C VR= 600 V, TA= 100 °C VR= 800 V, TA= 100 °C VR= 1000 V, TA= 100 °C
10 10 10 50 50 50
5 5 5 5 5 5
IF= 5 A 0.95
µA
mA
V
0.95
1.0
1.0
1.0
1.25
V
F2
IF= 50 A 1.5
V
1.5
2.1
1.7
1.7 3
V
F3
IF= 5 A, TA= -55°C
1.05
V
1.05
1.1
1.1
1.1
1.35
t
rr
IF= 0.5 A; IR= 1 A; I
= 0.25A
R(rec)
5
µsec 5 5
60
nsec
60 80
C
j
VR= 10 Vdc; f= 1 MHz; Vsig= 50 mV(pp) ,max
550 550
pF
250 550 550 250
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