Microsemi Corporation KV1951A, KV1931A, KV1921A, KV1911A, KV1991A Datasheet

UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION

TOC

VARACTOR DIODES

DESCRIPTION

The KV 1900 series of super hyperabrupt varactor di­odes combines low voltage with high ratio tuning. They
feature grown junction mesa technology for the highest
Q commercially available. Passivation is our dense mil
spec silicon dioxide for the lowest 1/F noise and low
leakage even at temperature extremes. They are avail­able in a wide range of package styles including chip
(style 00) and most other conventional ceramic micro­wave packages. When ordering, specify the desired
case style by adding its number as a suffix to the basic
model number. For more details on surface mount Super
Hyperabrupt Varactors see the Surface Mount Devices
section.

APPLICATIONS

Low voltage / battery powered equipment from UHF
through Ku band including:

• Wide bandwidth VCO’s

• Voltage Tunable Filters

• Phase Shifters

• Modulators

• VCXO’s

RATINGS:

Minimum Voltage Breakdown: 12V@10µA
Maximum Leakage Current: 50 nA @ 10V/25°C
Junction Operating Temp.: -55°C to +125°C
Storage Temp.: -65°C to +200°C

ELECTRICAL SPECIFICATIONS: TA=25°C

@ 1 V (pF) CJ@ 2.5 V (pF) CJ@ 4 V (pF) CJ@ 8 V (pF)

MODEL

KV1911A >36.00 18 - 27 <11.80 <6.00 400
KV1951A >26.00 13 - 20 < 8.80 <4.50 500
KV1921A >17.00 8.3 - 12.8 < 5.80 <3.00 600
KV1931A >13.00 6.3 - 9.8 < 4.30 <2.50 750
KV1941A > 9.00 4.3 - 6.3 < 2.80 <1.50 900
KV1961A > 3.80 1.8 - 2.8 < 1.30 <0.80 1200
KV1971A > 1.65 0.9 - 1.35 < 0.60 <0.35 1400
KV1981A > 1.20 0.6 - 0.9 < 0.45 <0.30 1600
KV1991A > 0.60 0.3 - 0.6 < 0.25 <0.15 1800

C

J

Q@4V/

50 MHz

SEMICONDUCTOR OPERATION

75 Technology Drive  Lowell, MA 01851  Tel: [phone]  Fax: [phone]

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