Microsemi Corporation HUM2010, HUM2015, HUM2020 Datasheet
HUM2010/HUM2015/HUM2020
WATERTOWN DIVISION
DESCRIPTION
DESCRIPTION
W ith high isolation, low loss, a nd low distortion chara cteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and p ower handling capability are critical.
Its advantages also include the low forward bias resistance and high
ze ro bia s impe dance tha t a re e sse ntial for low loss, high isola tion and wide
bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced
metallurgical bonds on both sides to achieve high reliability and high surge
capability.
IMPORTANT:
For the most current data, consult
DESCRIPTIONDESCRIPTION
MICROSEMI
’s website:
http://www.microsemi.com
PIN DIODE HIGH POWER STUD
Maximum Reverse Voltage 1000/1500/2000 V
Average Power Dissipation @ Stud = 50°C 13 W
Non-Repetitive Sinusoidal Surge Current (8.3 ms) 100 A
Storage Temperature Range 65°C to +175°C
Operating Temperature Range 55°C to +150°C
Thermal Resistance 7.5°C / W
ABSOLUTE MAXIMUM RATINGS
Diode Resistance RS
Capacitance CT
Reverse Current IR
Carrier Lifetime
Parallel Resistance RP
Forward Voltage V
Test Min Typ Max Units Conditions
τ
f
ELECTRICAL SPECIFICATIONS [25°C]
10 30
200
0.10 0.20
3.4 4.0
10
0.85 1.0
Ω
pF F = 1 MHz, 100 V
µ
A
µ
s
KΩ
V
Copyright 2000
MSC0874.PDF 2000-08-23
580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235
Microsemi
W atertown Division
[25°C]
[25°C][25°C]
F = 4 MHz, I
V
@ Rated Voltage
R
=10 mA / 100 V
I
f
F = 10 MHz, 100 V
= 0.5 A
I
f
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
!"High Power Stud Mount
Package
!"High Zero Bias Impeda nce
!"Very Low I nductance and
Capacitance
!"No Internal Lead Straps
!"Small Mechanical Outline
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
• MRI Applications
• High Power Antenna Switching
Voltage Ratings [25°C]
Voltage Ratings [25°C]
Voltage Ratings [25°C]Voltage Ratings [25°C]
Reverse Voltage Part type
(VR) - Volts
IR = 10µA
1000V HUM2010
1500V HUM2015
2000V HUM2020
=0.5 A
f
WWW.
Microsemi
.
COM
H
H
U
U
M
M
2
2
0
0
1
1
0
0
/
/
1
1
5
5
/
/
2
2
0
0
Page 1
2
HUM2010/HUM2015/HUM2020
WATERTOWN DIVISION
PIN DIODE HIGH POWER STUD
HUM2010, 15, 20
TYPICAL
0
10
Vr (V)
10
1
2
10
1
10
0
10
-1
10
Rs @ 4 MHz (Ohms)
-2
10
0
10
HUM2010, 15, 20
TYPICAL
1
10
If (mA)
10
16
12
8
Ct @ 1 MHz (pF)
4
0
2
3
10
-1
10
HUM2010, 15, 20
1
10
0
10
-1
10
If (A)
-2
10
-3
10
0.3 0.5 0.7 0.9 1.1 1.3 1.5
TYPICAL
Vf (V)
6
10
5
10
4
10
3
10
Rp (KOhms)
2
10
1
10
0
10
0 102030405060708090100
HUM2010, 15, 20
TYPICAL
1 MHz
100 MHz
Vr (V)
WWW.
Microsemi
.
COM
G
G
R
R
A
A
P
P
H
H
S
S
Copyright 2000
MSC0874.PDF 2000-08-23
Microsemi
W atertown Division
580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235
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