Microsemi Corporation GC4433, GC4431, GC4430, GC4413, GC4412 Datasheet

HIGH VOLTAGE PIN DIODES

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Control Devices

DESCRIPTION

The GC4400 series are high voltage, high power (cath­ode base) PIN diodes. These high resistivity silicon de­vices are passivated with silicon dioxide for high stability
and reliability and have been proven by thousands of de­vice hours in high reliability systems.

Each device can withstand storage temperatures from

-65° to +200°C and will operate over the range from -55°
to +150°C. All devices meet or exceed military environ­mental specifications of MIL-S-19500.

The GC4400 series will operate typically with +50 mA
forward bias. Breakdown voltages are available up to
1000 volts.

APPLICATIONS

The GC4400 series can be usedin RF circuits as an on/off
element, as a switch, or as a current controlled resistor in
attenuators extending over the frequency range from
UHF through Ku band.

Switch applications include high speed switches (ECM
systems), TR or lobing switches, channel or antenna se­lection switches (telecommunications), duplexers (ra­dar) and digital phase shifters (phased arrays).

The GC4400 series can be usedin RF circuits as an on/off
at moderate RF power levels.

Attenuator type applications includeamplitudemodulators,
AGC attenuators, power levelers and level set attenuators.

ELECTRICAL SPECIFICATIONS: TA= 25°C

MODEL

NUMBER

GC4410 100 0.10 0.6 .2 40
GC4411 100 0.25 0.5 .5 25
GC4412 100 0.50 0.4 .7 20
GC4413
GC4430 300 0.10 1.5 .5 40
GC4431 300 0.25 1.2 1.0 30
GC4432 300 0.50 1.0 1.5 20
GC4433
GC4490 1000 0.10 1.5 1.0 30
GC4491 1000 0.25 1.2 2.0 25
GC4492 1000 0.50 1.0 3.0 20
GC4493
GC4494 1000 1.3 .35 6.0 7
GC4495 1000 2.5 .3 7.5 5

3

3

3

BREAKDOWN VOLTAGE

=10µA MAX)

(I

R

(MIN)(Volts)

V

B

100 0.75 0.3 1.0 10

300 0.75 0.8 2.0 10

1000 0.75 0.8 5.0 10

JUNCTION

CAPACITANCE

CJ-50 (MAX)

(pF)

SERIES RESISTANCE

1

(100mA, 100 MHz)

(MAX)

R

S100

(Ohms)

2

CARRIER LIFETIME

(I

= 6mA, IF= 10mA)

R

T

L

(µsec)

(TYP)

THERMAL RESISTANCE

(MAX)
(°C/W)

Notes:

1. Capacitance is measured at 1 MHz and -50 volts.

2. Resistance is measured using transmission loss techniques.

3. These devices are not available in all case styles. Please consult the factory. specific package styles offered.

The tabulated specifications above are for case style 30.
Diodes are also available in various chip configurations.

RATINGS

Maximum Leakage Current: 0.5µA at 80% of minimum

Each type offers trade offs in series resistance, junction
capacitance, carrier lifetime and breakdown voltage; the
proper choice of which depends on the end application.
Reverse polarity diodes (NIP) and faster speed PIN and

Operating Temperature: -55°C to +150°C
Storage Temperature: -65°C to +200°C

NIP diodes are also available. (See data sheets for
GC4500, GC4200, and GC4300 series respectively.)

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SEMICONDUCTOR OPERATION

rated breakdown

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Control Devices

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HIGH VOLTAGE PIN DIODES

TYPICAL PERFORMANCE CURVES

SEMICONDUCTOR OPERATION

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