Microsemi Corporation GC4225, GC4224, GC4223, GC4222, GC4221 Datasheet
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HIGH SPEED PIN DIODES
TOC
Control Devices
DESCRIPTION
The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material.
These diodes are passivated with silicon dioxide for high
stability and reliability and have been proven by thousands of device hours in high reliability systems.
These devices can withstand storage temperaturesfrom
-65° to +200°C and will operate over the range from -55°
to +150°C. All devices meet or exceed military environmental specifications of MIL-S-19500. The GC4200 series will operate with as little as +10 mA forward bias.
APPLICATIONS
The GC4200 series can be used in RF circuitsas an on/off
element, as a switch, or as a current controlled resistor
in attenuators extending over the frequency range from
UHF through Ku band.
Switch applications include high speed switches (ECM
systems), TR switches, channel or antenna selection
switches (telecommunications), duplexers (radar) and
digital phase shifters (phased arrays).
The GC4200 series are also used as passive and active
limiters for low to moderate RF power levels.
Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenua-
ELECTRICAL SPECIFICATIONS: TA= 25°C
MODEL
NUMBER
GC4270 70 0.06 1.5 60 80
GC4271 70 0.10 1.0 60 70
GC4272 70 0.20 0.8 60 70
GC4273 70 0.30 0.7 60 60
GC4274 70 0.40 0.6 60 50
GC4275 70 0.50 0.5 60 40
GC4210 100 0.06 1.5 100 80
GC4211 100 0.10 1.0 100 70
GC4212 100 0.20 0.75 100 70
GC4213 100 0.30 0.6 100 60
GC4214 100 0.40 0.5 100 50
GC4215 100 0.50 0.35 100 40
GC4220 250 0.06 2.5 400 80
GC4221 250 0.10 2.0 400 70
GC4222 250 0.20 1.5 400 70
GC4223 250 0.30 1.0 400 60
GC4224 250 0.40 0.8 400 50
GC4225 250 0.50 0.6 400 40
BREAKDOWN VOLTAGE
= 10µA MAX)
(I
R
(MIN) (Volts)
V
B
JUNCTION
CAPACITANCE
CJ-10 (MAX)
(pF)
SERIES RESISTANCE
1
(20mA, 1 GHz)
(MAX)
R
S20
(Ohms)
2
CARRIER LIFETIME
(I
=6mA, IF=10mA)
R
T
(TYP)
L
(nS)
THERMAL RESISTANCE
(MAX)
(°C/W)
Notes:
1. Capacitance is measured at 1 MHz and -10 volts.
2. Resistance is measured using transmission loss techniques.
3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request.
The tabulated specifications above are for the style 30
package. Diodes may also be available in other case
styles.
Each type offers trade offs in series resistance, junction
capacitance and carrier lifetime; the proper choice of
which depends on the end application. Reverse polarity
RATINGS
Maximum Leakage Current: 0.5µA at 80% of minimum
rated breakdown
Operating Temperature: -55°C to +150°C
Storage Temperature: -65°C to +200°C
diodes (NIP) and higher voltage PIN and NIP diodes are
also available. (See data sheets for GC4300, GC4400,
and GC4500 series respectively.)
75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748
SEMICONDUCTOR OPERATION
71
Control Devices
TOC
HIGH SPEED PIN DIODES
TYPICAL PERFORMANCE CURVES
GC4270
GC4271
100
GC4272
GC4273
GC4274
GC4275
10
1.0
s
R SERIES RESISTANCE - (OHMS)
.1
.01 .1 1.0 10. 100
I FORWARD BIAS CURRENT - (mA)
F
SEMICONDUCTOR OPERATION
75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748
72
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