Microsemi Corporation BFR96 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
• Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
BFR96
• High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 15 Vdc
Collector-Base Voltage 20 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 100 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 100ºC
Derate above 100ºC
500
10
mWatts
mW/ ºC
MSC1309.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 15 - - Vdc
BVCB0 Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 20 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
ICBO Collector Cutoff Current
(VCB = 10 Vdc, VBE = 0 Vdc) - - 100 nA
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc) 30 - 200
BFR96
Min. Typ. Max. Unit
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain – Bandwidth Product
(IC = 50 mA, VCE = 10 Vdc, f = 0.5 GHz)
CCB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MSC1309.PDF 10-25-99
-
-
5.0 - GHz
2.6 3.2 pF
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