Microsemi Corporation BRF91, BFR91 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
• Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
• High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
BFR91
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 12 Vdc
Collector-Base Voltage 15 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 35 mA
Thermal Data
P
Tstg
R
θJA
D
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC 500 ºC/W
180
2.0
-65 to +150 ºC
mWatts
mW/ ºC
MSC1308.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 12 - - Vdc
BVCB0 Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 15 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
BFR91
(on)
DYNAMIC
ICBO Collector Cutoff Current
(VCB = 5.0 Vdc, VBE = 0 Vdc) - - 50 nA
HFE DC Current Gain
(IC = 30 mAdc, VCE = 5.0 Vdc) 25 - 250
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain – Bandwidth Product
(IC = 30 mA, VCE = 5.0 Vdc, f = 0.5 GHz)
CCB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
-
5.0 - GHz
0.7 1.0 pF
-
MSC1308.PDF 10-25-99
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