Microsemi Corporation 2N7372 Datasheet

SYMBOL

CHARACTERISTIC

2N7372

2N7373

UNITS

CBO

Collector-Base Voltage

- 100

100

V

C

Continuous Collector Current

55A

Peak Collector Current

1010A

Continuous Base Current

22A

STG

Storage Temperature

-65 to 200

Unclamped Inductive Load Energy

15

mj

FEATURES:FEATURES:

APPLICATIONS:APPLICATIONS:

• Power Supply

7516 Central Industrial Drive

DESCRIPTION:DESCRIPTION:

• Inverters and Converters

• General Purpose Amplifiers

Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]

2N7372 - PNP
2N7373 - NPN

Complimentary

• Planar Process for Reliability

• Fast Switching

• High-Frequency Power Transistors

• For Complementary Use with Each Other

• 15 mj Reverse Energy Rating with I

• Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package

• Leads can be Formed

• All Terminals Isolated from the Case

These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.

Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200°°C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.

= 10MA and 4 V Reverse Bias

C

Power Transistors

in Hermetic Isolated

TO-254AA Packages

JAN/TX/TXV/JANS

TO-254AA

ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:

V
V

CEO Collector-Emitter Voltage - 80 80 V

V

EBO

I
I

C

I

B

T

T

J Operating Junction Temperature -65 to 200 °°C

MSC1343.PDF 010-29-99

P

T

θθJC

Emitter-Base Voltage - 5.5 5.5 V

°°C

Lead Temperature 1/16" from cast for 10 sec. 300 °°C

Continuous Device

Dissipation TC = 25°°C
TC = 100°°C

Thermal Resistance Junction to Case 3 3 °°C/W

58 58 W
33 33 W

ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:

(25°°Case Temperature Unless Otherwise Noted)

SYMBOL CHARACTERISTIC TEST CONDITIONS

V

I

CEO

I

CES

I

CEX

I

EBO

CEO

Collector-Emitter Breakdown
Voltage

Collector Cutoff Current,
Base Open

Collector Cutoff
Current, Emitter-Base Short

Collector Cutoff Current
Emitter Cutoff

IC = 100 mA, I
I

= 0, V

B

V

= 100 V

CE

V

= 60 V

CE

V

= 60 V, VBE = 2 V, TC = 150°°C

BE

V

= 5.5 V, I

EB

CE

= 0

B

= 40 V

=0

C

2N7372 - PNP
2N7373 - NPN

VALUE

Min.

80 ---- V

---- 50

----

----

---- 500

----

Max.

1
1

1

Units

µA

mA

µA
µA

mA

HFE

V

BE

V

BE(sat)

V

CE(sat)

HFE

Ihfel

C

OBO

t

on

t

off

Current

Static Forward Current
Transfer Ratio

Base-Emitter Volatage
Base-Emitter Saturation

Voltage
Collector-Emitter Saturation

Voltage
Small Signal Common-

Emitter Forward Current
Transfer Ratio
Small Signal Common
Emitter Forward Current
Transfer Ratio
Open-Circuit Output
Capacitance

Turn-on Time ---- 0.5
Turn-off Time

V

= 4.0 V, I

EB

IC = 5.0 A, V
IC = 2.5 A, V
IC = 2.5 A, V
IC = 50 mA, V

IC = 2.5 A, V
IC = 2.5 A, IB = 0.25 A

IC = 5.0 A, IB = 0.5 A
IC = 5.0 A, IB = 0.5 A

IC = 2.5 A, IB = 0.25 A
V

= 5.0 V, I

CE

VCE = 5.0 V, I

VCB = 10 V, I
IC = 5.0 A, I

VBE (OFF) = 3.7V

=0

C

= 5.0 V

CE

= 5.0 V

CE

= 5.0 V, TC = -55°°C

CE

= 5.0 V

CE

= 5.0 V

CE

= 100 mA, F = 1.0 KHz

C

= 0.5A, F = 10 MHz

C

= 0A, F = 0.1 MHz

E

= IB2 = 0.5 A

B1

---­40
70

25
50

---- 1.45 V

----

----

----

---­50 ---- ----

7.0 ---- ----

---- 250 pF

---- 1.5

1

----

200

----

----

1.45

2.2

1.5

0.75

µµA

----

----

----

----

V
V
V

----

µµs
µµs

MSC1343.PDF 010-29-99