Microsemi Corporation 2N6353, 2N6352, 2N6351, 2N6350 Datasheet

120101

TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/472

Devices Qualified Level

2N6350 2N6351 2N6352 2N6353

MAXIMUM RATINGS

B

stg

2N6350
2N6352

80 150 Vdc
80 150 Vdc

2N6350
2N6351

1.0

5.0

Ratings Symbol

Collector-Emitter Voltage
Collector-Base Voltage

Emitter-Base Voltage
Base Current I
Collector Current

Total Power Dissipation @ TA = 250C
@ TC = 1000C
Operating & Storage Junction Temperature Range

V
V

V

T

J

CER
CBO

EBO

IC

PT

T

,

2N6351
2N6353

12

6.0

0.5 Adc

5.0

(1)

10

2N6352
2N6353

(2)
(3)

-65 to +200

2.0
25

(4)

(5)

Units

Vdc
Vdc

Adc
Adc

W
W

0

THERMAL CHARACTERISTICS

Characteristics Symbol

Thermal Resistance, Junction-to-Case

1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50%

2) Derate linearly @ 5.72 mW/0C above TA > 250C

3) Derate linearly @ 50 mW/0C above TC > 1000C

4) Derate linearly @ 11.4 mW/0C above TA > 250C

5) Derate linearly @ 250 mW/

0

C above TC > 1000C

2N6350
2N6351

R

θJC

20 4.0

2N6352
2N6353

Unit

0

C/W

ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage
IC = 25 mAdc, R
2N6351, 2N6353

= 2.2 kΩ, R

B1E

= 100 Ω 2N6350, 2N6352

B2E

V

(BR)

CER

2N6350, 2N6351
TO-33*

C

TO-24* (TO-213AA)

*See Appendix A for
package outline

80

150

JAN

JANTX

JANTXV

2N6352, 2N6353

Vdc

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]

Page 1 of 2

120101

2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Emitter-Base Breakdown Voltage
IEB = 12 mAdc, Base 1 Open
IEB = 12 mAdc, Base 2 Open
Collector-Emitter Cutoff Current
V

= 2.0 Vdc, R

EB1

V

= 2.0 Vdc, R

EB1

ON CHARACTERISTICS

= 100 Ω, VCE = 80 Vdc 2N6350, 2N6352

B2E

= 100 Ω, VCE = 150 Vdc 2N6351, 2N6353

B2E

(6)

Forward-Current Transfer Ratio
I

= 1.0 Adc, V

C

I

= 5.0 Adc, V

C

I

= 10 Adc, V

C

= 5.0 Vdc, R

CE

= 5.0 Vdc, R

CE

= 5.0 Vdc, R

CE

= 1.0 Ω 2N6350, 2N6352

B2E

= 100 Ω

B2E

= 100 Ω

B2E

I

= 1.0 Adc, V

C

I

= 5.0 Adc, V

C

I

= 10 Adc, V

C

= 5.0 Vdc, R

CE

= 5.0 Vdc, R

CE

= 5.0 Vdc, R

CE

= 1.0 Ω 2N6351, 2N6353

B2E

= 100 Ω

B2E

= 100 Ω

B2E

Collector-Emitter Saturation Voltage
IC = 5.0 Adc, R
IC = 5.0 Adc, R

= 100 Ω, IB1 = 5.0 mAdc 2N6350, 2N6352

B2E

= 100 Ω, IB1 = 10 mAdc 2N6351, 2N6353

B2E

Base-Emitter Voltage
IC = 5.0 Adc, VCE = 5.0 Vdc, R

= 100 Ω

B2E

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I

= 1.0 Adc, V

C

= 10 Vdc, R

CE

= 100 Ω; f = 10 MHz

B2E

Output Capacitance
V

= 10 Vdc, 100 kHz ≤ f ≤ 1.0 MHz, Base 2 Open

CB1

SWITCHING CHARACTERISTICS

Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352)
(See fig 5 for 2N6350, 2N6352)

SAFE OPERATING AREA

DC Tests
TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, R

= 100 Ω (See fig 6 for 2N6350, 2N6351)

B2E

Test 1

VCE = 1.5Vdc, IC = 3.3 Adc 2N6350, 2N6351

Test 2

VCE = 30 Vdc, IC = 167 mAdc 2N6350, 2N6351

Test 3

VCE = 80 Vdc, IC = 35 mAdc 2N6350

Test 4

VCE = 150 Vdc, IC = 13 mAdc 2N6351

TC = +1000C, 1 Cycle, t ≥≥ 1.0 s, tr + tf = 10 µµs, R

= 100 ΩΩ (See fig 7 for 2N6352, 2N6353)

B2E

Test 1

VCE = 5.0Vdc, IC = 5.0 Adc 2N6352, 2N6353

Test 2

VCE = 10 Vdc, IC = 2.5 Adc 2N6352, 2N6353

Test 3

VCE = 80 Vdc, IC = 95 mAdc 2N6352

Test 4

VCE = 150 Vdc, IC = 35 mAdc 2N6353

(6) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]

Symbol Min. Max. Unit

V

(BR)

EBO

6.0

Vdc

12

I

CEX

1.0

µAdc

1.0

hFE

2,000
2,000

400

1,000
1,000

10,000

10,000

200

V

CE(sat)

1.5

Vdc

2.5

V

BE1(on)

h

C

obo

t

on

t

off



fe

5.0

0.5

1.2

2.5

25

120

Vdc

pF

µs

µs

Page 2 of 2