Microsemi Corporation 2N6304 Datasheet
140 COMMERCE DRIVE
FAX: (215) 631-9855
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
• Noise Figure = 5.0 dB (typ) @ f = 450 MHz
2N6304
• High FT - 1.4 GHz (min) @ IC = 10 mAdc
• Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2
1. Emitter
1
2. Base
3
3. Collector
4
4. Case
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Collector-Emitter Voltage 15 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 3.5 Vdc
Collector Current 50 mA
200
1.14
mWatts
mW/ ºC
MSC1323.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 15 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
BVEBO Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
ICBO Collector Cutoff Current
(VCB = 5.0 Vdc, IE = 0 Vdc) - - 10 nAdc
(on)
HFE DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 25 - 250
2N6304
Min. Typ. Max. Unit
30 - - Vdc
3.5 - -
Vdc
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
NF Noise Figure (50 Ohms)
CCB
MSC1323.PDF 10-25-99
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1.4 - - GHz
(IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz) 5.0 dB
Collector-Base Capacitance
(VCB = 10Vdc, IE = 0, f = 1 MHz) - 0.8 1.0 pF
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