Microsemi Corporation 2N6255 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF Transistor
• 3.0 Watt Power Output @ 175 MHz
• Power Gain, G
• Efficiency = 50%
= 7.8 dB
PE
2N6255
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter 18 Vdc
Collector-Base Voltage 36 Vdc
Emitter-Base Voltage 4.0 Vdc
Collector Current 1 A
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
5.0
28.5
Watts
mW/ ºC
MSC1306.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCES Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE =0Vdc) 36 - - Vdc
BVCEO Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0) 18 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) 4.0 -
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 5.0 mA
ICBO Emitter Cutoff Current
(VCB = 15 Vdc, IE = 0) - - .25
2N6255
Vdc
mA
(on)
DYNAMIC
FUNCTIONAL
HFE DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc) 5.0 - -
Symbol Test Conditions Value
COB Output Capacitance
(VCB = 12.5Vdc, f = 1.0 MHz
Symbol Test Conditions Value
G
PE
η
C
Power Gain Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
Collector Efficiency Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
-
Min. Typ. Max. Unit
7.8 - - dB
50
15 20 pF
- - %
-
MSC1306.PDF 10-25-99
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