Microsemi Corporation 2N5179 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, TO-72 packaged VHF/UHF Transistor
• Low Noise, NF = 4.5 dB (max) @ 200 MHz
• High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
• Characterized with S-Parameters
2N5179
2
1. Emitter
1
2. Base
3
3. Collector
4
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 12 Vdc
Collector-Base Voltage 20 Vdc
Emitter-Base Voltage 2.5 Vdc
Collector Current 50 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
300
1.71
mWatts
mW/ ºC
MSC1305.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
VCEO(sus) Collector-Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0) 12 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC=1.0 µAdc, IE=0)
BVEBO Emitter Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0) 2.5 - -
ICBO Collector Cutoff Current
(VCB = 15 Vdc, IE = 0) - - .02
(on)
HFE DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc) 25 - 250
VBE(sat) Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
2N5179
Min. Typ. Max. Unit
20 - - Vdc
Vdc
µA
-
- -
- -
1.0 Vdc
0.4 Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
CCB Collector-base Capacitance
MSC1305.PDF 10-25-99
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 900 1500 - MHz
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
- 1.0 pF
Loading...