Microsemi Corporation 2N5109 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 50mA
• Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
2N5109
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
IC Collector Current 400 mA
Collector-Emitter Voltage 20 Vdc
Collector-Base Voltage 40 Vdc
Emitter-Base Voltage 3.0 Vdc
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC (1)
Derate above 25ºC
2.5
20
Watts
mW/ ºC
Note 1. Total Device dissipation at T
MSC1304.PDF 10-25-99
= 25ºC is 1 Watt.
A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO(sus) Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0) 20 - - Vdc
BVCER(sus) Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms) 40 - - Vdc
ICEO Collector Cutoff Current
(VCE = 15 Vdc, IB = 0) - - 20
IEBO Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) - - 100
2N5109
µA
µA
(on)
DYNAMIC
HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 15.0 Vdc)
Symbol Test Conditions Value
f
T
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) - 1200 - MHz
5
40
Min. Typ. Max. Unit
-
-
-
120
-
-
MSC1304.PDF 10-25-99
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