Microsemi Corporation 2N5031 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
2N5031
2
1. Emitter
1
2. Base
3
3. Collector
4
4. Case
TO-72
DESCRIPTION:
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial
equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 10 Vdc
Collector-Base Voltage 15 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 20 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ ºC
MSC1303.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 10 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0) 15 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0) 3.0 - -
ICBO Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc) - 1.0 10 nA
(on)
HFE DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 - 300
2N5031
Min. Typ. Max. Unit
Vdc
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
CCB Output Capacitance
MSC1303.PDF 10-25-99
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1200 - 2500 MHz
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
-
2.5 - dB
Loading...