Microsemi Corporation 2N4427 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• 1 Watt Minimum Power Output @ 175 MHz
• 500 MHz Current-Gain Bandwidth Product @ 50mA
• Power Gain, G
= 10dB (Min) @ 175 MHz
PE
2N4427
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter 20 Vdc
Collector-Base Voltage 40 Vdc
Emitter-Base Voltage 2.0 Vdc
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ ºC
MSC1301.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCER Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms) 40 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0) 20 - - Vdc
ICEO Collector Cutoff Current
(VCE = 12 Vdc, IB = 0) - - 20
ICEX Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc) - - 100
IEBO Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0) - - 100
2N4427
µA
µA
µA
(on)
VCE(sat) Collector-Emitter Saturation Voltage
DYNAMIC
HFE DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, IB = 20 mAdc)
Symbol Test Conditions Value
f
T
COB Output Capacitance
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 500 - - MHz
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
10
5
- -
Min. Typ. Max. Unit
-
-
-
4.0 - pF
200
-
0.5 Vdc
-
-
MSC1301.PDF 10-25-99
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