Microsemi Corporation 2N3868 Datasheet
CEO
*
-
C
*
STG
*
APPLICATIONS:
7516 Central Industrial Drive
Riviera Beach, Florida
DESCRIPTION:DESCRIPTION:
FEATURES:
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
• Collector-Emitter Sustaining Voltage: V
• DC Current Gain: h
• Low Collector-Emitter Saturation Voltage:
V
• High Current-Gain - Bandwidth Product: f
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
= - 0.75 Vdc @ IC = 1.5 Adc
CE(sat)
= 30-150 @ IC = 1.5 Adc
FE
CEO(sus)
= - 60 Vdc (Min)
= 90 MHz (Typ)
T
2N3868
Silicon PNP Power
Transistors
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200°°C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
ABSOLUTE MAXIMUM RATIABSOLUTE MAXIMUM RATINGS:NGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
V
*
CB
V
*
EB
I
I
*
C
I
*
B
T
T
*
J
P
*
D
P
* Indicates JEDEC registered data.
MSC1060.PDF 05-19-99
D
θθ JC
*
TO-5
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current 10 Adc
Continuous Collector Current 3.0 Adc
Base Current 0.5 Adc
Storage Temperature -65 to 200 °°C
Operating Junction Temperature -65 to 200
Total Device Dissipation
TC = 25°°C
Derate above 25°°C
Total Device Dissipation
TA = 25°°C
Derate above 25°°C
Thermal Resistance
Junction to Case
Junction to Ambient
60
- 60
- 4.0
6.0
34.3
1.0
5.71
29
175
Vdc
Vdc
Vdc
°°C
Watts
mW/°°C
Watts
mW/°°C
°°C/W
°°C/W
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
CEO(sus)
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
V
BV
BV
I
I
V
CE(sat)
V
BE(sat)
CBO
EBO
CEX
CBO
h
FE
f
T
*
Collector-Emitter
*
Sustaining Voltage
Collector-Base
*
Breakdown Voltage
Emitter-Base Breakdown
*
Voltage
* Collector Cutoff Current V
Collector Cutoff Current
*
DC Current Gain
*
(Note 1)
*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Saturation
*
Voltage
(Note 1)
Current Gain Bandwidth
Product (Note 2)
IC = 20 mAdc, IB = 0 (Note 1) - 60
IC = 100 µµAdc, IE = 0 - 60
IE = 100 µµAdc, IC = 0 - 4.0
= - 60V, V
CE
VCB = - 60V, IE = 0, TC = 150°°C
IC = 500 mAdc, VCE = - 1.0 Vdc
IC = 1.5 Adc, VCE = - 2.0 Vdc
IC = 2.5 Adc, VCE = - 3.0 Vdc
IC = 3.0 Adc, VCE = - 5.0 Vdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
IC = 100 mAdc, VCE = - 5.0 Vdc, f
BE(off)
= 2.0 Vdc
test
= 20 MHz
2N3868
VALUE
Min.
---- 1.0
---- 150
35
30
20
20
----
----
----
----
- 0.9
---60 ---- MHz
Max.
Units
---- Vdc
---- Vdc
---- Vdc
µµAdc
µµAdc
----
150
----
----
- 0.5
- 0.75
- 1.3
- 1.0
- 1.4
- 2.0
----
----
----
----
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Cob* Output Capacitance VCB = - 10 Vdc, IE = 0, f = 0.1 MHz
C
* Input Capacitance V
ib
td*
tr*
ts*
tf*
Note 1: Pulse Test: Pulse Width ≤≤ 300µµs, Duty Cycle ≤≤ 2.0%.
Note 2: fT = |hfe| * f
* Indicates JEDEC registered data.
MSC1060.PDF 05-19-99
Delay Time
Rise Time
Storage Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc
Fall Time
test
= - 3.0 Vdc, IC = 0, f = 0.1 MHz
EB
VCC = - 30 Vdc, V
IB1 = 150 mAdc
VCC = - 30 Vdc, V
IB1 = 150 mAdc
VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc
= 0, IC =1.5 Adc,
BE(off)
= 0, IC =1.5 Adc,
BE(off)
---- 120 pF
---- 1000 pF
---- 35 ns
---- 65 ns
---- 325 ns
---- 75 ns
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