Microsemi Corporation 2N3866A, 2N3866 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
• 800 MHz Current-Gain Bandwidth Product
2N3866 / 2N3866A
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter 30 Vdc
Collector-Base Voltage 55 Vdc
Emitter-Base Voltage 3.5 Vdc
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation
Derate above 25ºC
5.0
28.6
Watts
mW/ ºC
MSC1067.PDF 3-10-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCER Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0) 30 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc) 55 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc
ICEO Collector Cutoff Current
(VCE = 28 Vdc, IB = 0) - - 20
ICEX Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100
2N3866 / 2N3866A
Min. Typ. Max. Unit
µA
µA
(on)
HFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
DYNAMIC
Symbol Test Conditions Value
f
T
COB Output Capacitance
MSC1067.PDF 3-10-99
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
(IC = 100 mAdc, IB = 20 mAdc)
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866
2N3866A
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
5.0
10
25
- -
Min. Typ. Max. Unit
500
800
-
-
-
-
800
-
2.8 3.5 pF
200
200
1.0 Vdc
-
-
MHz
-
-
-
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