Microsemi Corporation 2N3741A Datasheet
CEO
*
STG
*
JC
Thermal Impedance
C/W
APPLICATIONS:
• Drivers
7516 Central Industrial Drive
DESCRIPTION:DESCRIPTION:
Indicates JEDEC registered data.
FEATURES:
• Switches
• Medium-Power Amplifiers
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3741A
• Low Saturation Voltage: 0.6 V
• High Gain Characteristics: hFE @ I
• Excellent Safe Area Limits
• Low Collector Cutoff Current: 100 nA (Max) 2N3741A
@ IC = 1.0 Amp
CE(sat)
= 250 mA: 30-100
C
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
Medium Power
PNP Transistors
TO-66
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
V
EB
V
CB
I
*
C
I
*
C
I
*
*
B
T
T
*
J
P
*
D
θθ
*
*
Collector-Emitter Voltage 80 Vdc
Emitter-Base Voltage 7.0 Vdc
Collector-Base Voltage 80 Vdc
Peak Collector Current 10 Adc
Continuous Collector Current 4.0 Adc
Base Current 2.0 Adc
Storage Temperature -65 to 200
Operating Junction Temperature -65 to 200
Total Device Dissipation
TC = 25°°C
Derate above 25°°C
MSC1042.PDF 03-12-99
25
0.143
7
°°C
°°C
Watts
W/°°C
°°
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
V
CEO(sus)*
I
EB0*
I
CEX*
I
CEO
I
CBO*
h
FE
V
CE(sat)
V
BE*
Collector-Emitter
Sustaining Voltage
Emitter Base Cutoff
Current
Collector Cutoff Current
Collector-Emitter Cutoff
*
Current
Collector Base Cutoff
Current
DC Current Gain
*
(Note 1)
Collector-Emitter
*
Saturation Voltage
(Note 1)
Base-Emitter Voltage
(Note 1)
IC = 100 mAdc, IB = 0 (Note 1)
VEB = 7.0 Vdc
VCE = 80 Vdc, V
VCE = 60 Vdc, V
VCE = 60 Vdc, IB = 0
VCB = 80 Vdc, IE = 0
IC = 100 mAdc, VCE = 1.0 Vdc
IC = 250 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.0 Vdc
IC = 1.0 Adc, IB = 125 mAdc
IC = 250 mAdc, VCE = 1.0 Vdc
= 1.5 Vdc
BE(off)
= 1.5 Vdc, TC = 150°°C
BE(off)
2N3741A
VALUE
Min.
80 ---- Vdc
---- 100 nAdc
----
----
---- 1.0
---- 100 nAdc
40
30
20
10
---- 0.6 Vdc
---- 1.0 Vdc
Max.
100
0.5
----
100
----
----
Units
nAdc
mAdc
µµAdc
----
----
----
----
f
*
T
h
*
fe
C
ob*
Note 1: Pulse Test: PW ≤≤ 300µµs, Duty Cycle ≤≤ 2.0%
* Indicates JEDEC registered data.
MSC1042.PDF 03-12-99
Current Gain Bandwidth
Product
Small-Signal Current
Gain
Common Base Output
Capacitance
IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHz
IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz
VCB = 10 Vdc, IC = 0, f = 100 kHz
3.0 ---- MHz
25 ---- ----
---- 100 pF
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