Microsemi Corporation 2N3719 Datasheet
SYMBOL
CHARACTERISTIC
VALUE
UNITS
CEO
*
C
*
STG
*
mW/°°C
FEATURES:
APPLICATIONS:
• High-Speed Switching
7516 Central Industrial Drive
DESCRIPTION:DESCRIPTION:
• Medium-Current Switching
• High-Frequency Amplifiers
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3719
• Collector-Emitter Sustaining Voltage:
V
CEO(SUS)
• DC Current Gain:
hFE = 25-180 @ IC = 1.0 Adc
• Low Collector-Emitter Saturation Voltage:
V
CE(sat)
• High Current-Gain - Bandwidth Product:
fT = 90 MHz (Typ)
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200°°C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
= 40 Vdc (Min) - 2N3719
= 0.75 Vdc @ IC = 1.0 Adc
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
Silicon PNP
Power Transistors
TO-5
V
V
*
CB
V
*
EB
I
I
*
C
I
*
B
T
T
*
J
P
*
D
P
*
* Indicates JEDEC registered Data.
MSC1026.PDF 02-24-99
D
θθ JC
Collector-Emitter Voltage 40 Vdc
Collector-Base Voltage 40 Vdc
Emitter-Base Voltage 4.0 Vdc
Peak Collector Current 10 Adc
Continuous Collector Current 3.0 Adc
Base Current 0.5 Adc
Storage Temperature -65 to 200 °°C
Operating Junction Temperature -65 to 200
Total Device Dissipation
TC = 25°°C
Derate above 25°°C
Total Device Dissipation
TA = 25°°C
Derate above 25°°C
Thermal Resistance
Junction to Case
Junction to Ambient
6.0
34.3
1.0
5.71
29
175
°°C
Watts
Watts
mW/°°C
°°C/W
°°C/W
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
V
CEO(sus)*
I
CEX
I
CBO*
I
EBO
hFE*
V
CE(sat)
V
BE(sat)
f
*
T
C
ob
C
ib
t
on
t
off
Collector-Emitter
Sustaining Voltage
Collector Cutoff Current
*
Collector Cutoff Current
* Emitter Cutoff Current
DC Current Gain
(Note 1)
Collector-Emitter
*
Saturation Voltage
(Note 1)
Base-Emitter Saturation
Voltage
*
(Note 1)
Current-Gain Bandwidth
Product
(Note 2)
Output Capacitance
*
*
*
*
Input Capacitance
Turn-on Time
Turn-off Time
IC = 20 mAdc, I
VCE = 40 Vdc, V
VCE = 40 Vdc, V
VCB = 40 Vdc, I
VBE = 4.0 Vdc, I
IC = 500 mAdc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc, T
IC = 1.0 Adc, IB = 100 mAdc, T
IC = 3.0 Adc, IB = 300 mAdc, T
IC = 1.0 Adc, IB = 100 mAdc, T
IC = 3.0 Adc, IB = 300 mAdc, T
I
= 500 mAdc, V
C
VCB = 10 Vdc, I
VEB = 0.5 Vdc, I
VCC = 12 Vdc, V
VCC = 12 Vdc, I
= 0 (Note 1)
B
= 2.0 Vdc
BE(off)
= 2.0 Vdc, TC = 150°°C
BE(off)
= 0
E
= 0
C
= 10 Vdc, f
CE
= 0, f = 0.1 MHz
E
= 0, f = 0.1 MHz
C
= 0, I
(off)
BE
= 1.0 Adc, IB1 = IB2 = 100 mAdc
C
= 1.0 Adc, I
C
= - 40°°C
C
= - 40°°C to + 100°°C
C
= - 40°°C to + 100°°C
C
= - 40°°C to + 100°°C
C
= - 40°°C to + 100°°C
C
= 30 MHz
test
= 0.1 Adc
B1
2N3719
VALUE
Min.
40 ---- Vdc
----
----
---- 10
---- 1.0 mAdc
20
25
15
----
----
----
---60 ---- MHz
---- 120 pF
---- 1000 pF
---- 100 ns
---- 400 ns
Max.
10
1.0
----
180
----
0.75
1.5
1.5
2.3
Units
µAdc
mAdc
µAdc
----
----
----
Vdc
Vdc
Vdc
Vdc
Note 1: Pulse Test: Pulse width ≤≤ 300µµS, Duty Cycle = 2.0%.
Note 2: fT = | hfe | * f
test
* Indicates JEDEC registered data
MSC1026.PDF 02-24-99
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