Microsemi Corporation 2N3585 Datasheet
APPLICATIONS:
7516 Central Industrial Drive
Riviera Beach, Florida
DESCRIPTION:DESCRIPTION:
Indicates JEDEC registered data.
FEATURES:
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
• Off-Line Inverters • Deflection Circuits
• Switching Regulators • DC-DC Converters
• Motor Controls • High Voltage Amplifiers
2N3585
5 Amp, 500V,
High Voltage
• High Voltage: 250 to 500V • High Current: 2 Amps
• Fast Switching: t
• High Power: 35 Watts
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
V
CBO
V
CEO
V
CER
V
EBO
IC* Peak Collector Current 5 Amps
IC* Continuous Collector Current 2 Amps
IB* Base Current 1 Amps
T
STG
TJ* Operating Junction Temperature -65 to 200
* Lead Temperature 1/16" from Case for 10 Sec. 235
PT*
θθ JC
NPN Silicon Power
< 3µµsec. • Low V
f
* Collector-Base Voltage 500 Volts
* Collector-Emitter Voltage 300 Volts
*
* Emitter-Base Voltage 6 Volts
* Storage Temperature -65 to 200
Collector-Emitter Voltage RBE = 50ΩΩ
Power Dissipation
TC = 25°°C
Thermal Impedance
CE (SAT)
Transistors
TO-66
400 Volts
°°C
°°C
°°C
35
5.0
Watts
°°C/W
*
MSC1057.PDF 05-19-99
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
V
CEO(sus)*
V
CER(sus)
I
CEV*
I
CEV
I
CEO*
I
EB0*
hFE* DC Forward Current
V
CE(sat)
V
BE(sat)
Collector-Emitter
IC = 0.2 Amp (Notes 1 and 2) 300 ---- Volts
Sustaining Voltage
Collector-Emitter
IC = 0.2A, RBE = 50ΩΩ (Notes 1 and 2)
Sustaining Voltage
Collector Cutoff Current
* Collector Cutoff Current
VCE = 450V, VBE = -1.5V ---- 1.0 mA.
VCE = 300V, VBE = -1.5V ---- 3.0 mA.
TC = 150°°C
Collector Cutoff Current VCE = 150V, IB = 0 ---- 5.0 mA.
Emitter Cutoff Current VEB = 6V, IC = 0 ---- 0.5 mA.
IC = 0.1A, VCE = 10V
Transfer Ratio
(Note 1)
* Collector-Emitter
IC = 1.0A, VCE = 10V
IC = 1.0A, VCE = 2V
IC = 1.0A, IB = 0.125A ---- 0.75 Volts
Saturation Voltage
(Note 1)
* Base-Emitter Saturation
IC = 1.0A, IB = 0.10A ---- 1.4 Volts
Voltage (Note 1)
2N3585
VALUE
Min.
400 ---- Volts
40
25
Max.
100
8
----
80
Units
----
----
----
I
S/b
Second-Breakdown
VCE = 100V, t = 1.0sec. 0.35 ---- A
Collector Current (with
base forward biased)
E
S/b*
Second-Breakdown
VEB = 4V, RBE = 20ΩΩ, L = 100µµh
200 ---Energy (with base
reverse biased)
hfe* Common-Emitter Small-
VCE = 10V, IC = 0.2A, f = 5 MHz 3 ---- ---Signal Forward Current
Transfer Ratio
I hfe I* Common-Emitter Small-
VCE = 10V, IC = 0.2A 2.0 ---- ---Signal Forward Current
Transfer Ratio, f = 5 MHz
C
Ob
Collector-Base
VCB = 10V, IE = 0, f = 1.0MHz ---- 120 pf
Capacitance
tr* Rise Time IC = 1.0A, IB2 = 0.10A ---- 3.0
ts* Storage Time IC = 1.0A, IB1 = IB2 = 0.10A ---- 4.0
tf* Fall Time IC = 1.0A, IB1 = IB2 = 0.10A ---- 3.0
Note 1: Pulse Test: Pulse width = 300µµSec., Rep. Rate 60Hz.
Note 2: Caution - Do not use Curve Tracer.
* Indicates JEDEC registered data.
MSC1057.PDF 05-19-99
µµJ
µµsec.
µµsec.
µµsec.
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