Microsemi Corporation 2N3501 Datasheet
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N3501
Features
• Meets MIL-S-19500/366
• Collector-Base Voltage 150V
150 Volts
500mAmps
• Collector Current: 500 mA
• Fast Switching 1265 nS
NPN
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING SYMBOL MAX. UNIT
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current—Continuous I
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
Operating Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
CEO
CBO
EBO
P
P
θJA
θJC
C
D
D
J
S
150 Vdc
150 Vdc
6.0 Vdc
300 mAdc
1.0
5.71
5.0
28.6
-55 to
+200
-55 to
+200
175
35
Watt
mW/oC
Watts
mW/oC
o
o
o
C
o
C
C/W
C/W
Mechanical Outline
Datasheet# MSC0282A 5/19/97
2N3501
Electrical Parameters (TA @ 25°°C unless otherwise specified)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
(VCB = 75 Vdc, IE = 0, TA = 150oC)
Emitter Cutoff Current
(V
= 4.0 Vdc, IC = 0)
EB(off)
D.C. Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(Ic = 150 mAdc, V
CE = 10Vdc) @ 55C
(IC = 300 mAdc, VCE = 10 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
Base-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(VCE = 20 Vdc, IC = 20 mAdc, f = 100 MHz)
BV
BV
BV
I
I
V
CE(Sat)
V
BE(Sat)
/hfe/
CEO
CBO
EBO
CBO
EBO
h
FE
150 -- --
150 -- --
6.0 -- --
--
--
--
--
0.05
50
-- -- 25
35
50
75
100
45
20
--
--
--
--
--
--
--
--
300
--
--
--
--
--
--
0.2
0.4
0.8
1.2
1.5 -- 8
--
--
--
--
--
--
Vdc
Vdc
Vdc
µAdc
nAdc
--
Vdc
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100kHz < f < 1MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100kHz < f < 100MHz)
Small -signal Current Gain
(Ic = 10mAdc, VCE = 10Vdc, f = 1.0 kHz)
Noise figure
(V
= 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz)
CE
Noise figure
( VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz)
Turn - on time
( VEB = 12Vdc, IC = 150mAdc, IB1 = 15mAdc)
Turn - off time
( IC = 150mAdc, IB1 = IB2 = -15mAdc)
(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
C
OBO
pf
-- -- 8.0
C
IBO
pf
-- -- 80
h
fe
75 -- 300
NF
NF
t
t
on
off
16 dB
6 dB
115 nS
1150 nS
Datasheet# MSC0282A 5/19/97
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