Microsemi Corporation 2N3421 Datasheet
SYMBOL
FEATURES:
APPLICATIONS:
• Power Supply
7516 Central Industrial Drive
DESCRIPTION:DESCRIPTION:
Indicates MIL-S-19500/393
• Pulse Amplifier
• High Frequency Power Switching
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3421
3 Amp, 125V,
• Meets MIL-S-19500/393
• Collector-Base Voltage: up to 125
• Peak Collector Current: 5A
• High Power Dissipation in TO-5: 15W @ T
• Fast Switching
= 100°°C
C
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
TO-5
V
* Collector-Base Voltage 125 Volts
CBO
V
* Collector-Emitter Voltage 80 Volts
CEO
V
* Emitter-Base Voltage 8 Volts
EBO
IC* D.C. Collector Current 3 Amps
*
IC* Peak Collector Current 5 Amps
T
* Storage Temperature -65 to 200
STG
TJ* Operating Junction Temperature -65 to 200
PT* Power Dissipation
MSC0983A.DOC 12-02-98
TC = 25°°C Ambient
TC = 100°°C Case
1.0
15
°°C
°°C
Watts
Watts
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS::
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
BV
I
CEX
CEO*
Collector-Emitter
Breakdown Voltage
Collector-Emitter
*
Cutoff Current
I
CEO*
I
EBO
Collector-Emitter
Cutoff Current
*
Emitter-Base
Cutoff Current
hFE* D.C. Current Gain
(Note 1)
V
*
CE(sat)
Collector-Emitter
Saturation Voltage
(Note 1)
V
BE(sat)*
Base-Emitter Saturation
Voltage (Note 1)
Forward Biased Second
Breakdown
Unclamped Reverse
Biased Second
E
I
S/b*
S/b*
Breakdown
E
S/b*
fT*
Clamped Reverse Biased
Second Breakdown
Gain Bandwidth Product
COb* Output Capacitance VCB = 10 Vdc, I
t
on
t
off
Turn-on Time
Turn-off Time
IC = 50 mAdc, Cond. D (Note 1)
VEB = 0.5 Vdc, Cond. A, VCE = 120 Vdc
VEB = 0.5 Vdc, Cond. A, T
= 150°°C, VCE = 120 Vdc
A
VCE = 60 Vdc, Cond. D
VEB = 6 Vdc, Cond. D
VEB = 8 Vdc, Cond. D
IC = 100 mAdc, VCE = 2 Vdc
IC = 1 Adc, VCE = 2 Vdc
IC = 2 Adc, VCE = 2 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, V
= 2 Vdc, T
CE
= - 55°°C
A
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
VCE = 5 Vdc, T
VCE = 37 Vdc, T
VCE = 80 Vdc, T
= 100°°C
C
= 100°°C
C
= 100°°C
C
IC = 3 Adc, L = 10 mH, Base Open
IC = 3 Adc, L = 40 mH, V
Clamp
= 125V
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
= 0, f = 1 MHz ---- 150 pf
E
IC = 1 Adc, I
IC = 1 Adc, I
= - IB2 = 0.1 Adc
B1
= - IB2 = 0.1 Adc
B1
2N3421
VALUE
Min.
80 ---- Vdc
----
----
---- 5.0
----
---40
40
30
15
10
----
----
0.6
0.7
3
0.4
120
45 ---- mj
180 ---- mj
26 160 MHz
---- 0.3
---- 1.2
Max.
0.3
50
0.5
10
----
120
----
----
----
0.25
0.5
1.2
1.4
----
----
----
Units
µAdc
µAdc
µAdc
µAdc
µAdc
----
----
----
----
---Vdc
Vdc
Vdc
Vdc
Adc
Adc
mAdc
µµs
µµs
Note 1: Pulse Test: Pulse width = 300µµSec., duty cycle ≤≤ 2%.
* Indicates MIL-S-19500/393
MSC0983A.DOC 12-02-98
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