Microsemi Corporation 2N3251A Datasheet
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N3251A
Features
• Meets MIL-S-19500/323
• Collector-Base Voltage 60V
60 Volts
200 mAmps
• Collector Current: 200 mA
• Fast Switching 370 nS
PNP
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING SYMBOL MAX. UNIT
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current I
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
Operating Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
CEO
CBO
EBO
P
P
θJA
θJC
C
D
D
J
S
-60 Vdc
-60 Vdc
-5.0 Vdc
-200 mAdc
0.36
2.4
1.2
8
-65 to
+175
-65 to
+175
417
146
Watts
mW/oC
Watts
mW/oC
o
o
o
C
o
C
C/W
C/W
Mechanical Outline
Datasheet# MSC0281A 5/19/97
2N3251A
Electrical Parameters (TA @ 25°°C unless otherwise specified)
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1) (IC = -10 mAdc)
Collector-Base Breakdown Voltage (IC = -10 µAdc)
Emitter-Base Breakdown Voltage (IE = -10 µAdc)
Collector Cutoff Current (VCE = -40 Vdc, VEB = -3.0 Vdc)
( at 150 C )
Base Cutoff Current (VCE = -40 Vdc, VEB = -3.0 Vdc)
D.C. Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(Ic = -1.0mAdc, VCE= -1.0Vdc) @ -55C
(IC = -10 mAdc, VCE = -1.0 Vdc)(1)
(IC = -50 mAdc, VCE = -1.0 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Base-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(IC = -10 mAdc, VCE = -20 Vdc, f = 100MHz)
Output Capacitance
(VCB = -10 Vdc, IE = 0, 100kHz < f < 1MHz)
Input Capacitance
(VEB = -10 Vdc, IC = 0, 100kHz < f < 1MHz)
Input Impedance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Small—Signal Current Gain
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Output Admittance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz)
Collector Base Time Constant
(IC = -10 mA, VCE = -20 V, f = 31.8 MHz)
Noise Figure
(IC = -100 µA, VCE = -5.0 V, RS = 1.0kΩ, f = 100 Hz)
Switching Speeds
(VCC = -3.0 Vdc, VBE = +0.5 Vdc
IC = -10 mAdc, IB1 = -1.0 mA)
(VCC = -10 mAdc, IB1 = IB1 = -1.0 mAdc)
(VCC = -3.0 V)
BV
BV
BV
I
I
h
V
CE(Sat)
V
BE(Sat)
/hfe/
C
C
h
rb’C
NF
ton
CEO
CBO
EBO
CEX
BEX
FE
OBO
IBO
h
je
h
re
h
fe
oe
t
off
C
-60 -- Vdc
-60 -- Vdc
-5.0 -- Vdc
-- -20
-20
-- -50 nAdc
80
90
40
100
30
--
--
-0.6
--
--
--
--
300
--
-0.25
-0.5
-0.9
-1.2
3.0 9.0
-- 6.0
-- 8.0
kohms
2.0 12
-- 20
100 400
µmhos
10 60
5 250
-- 6.0
-- 70 ns
-- 300 ns
nA
uA
--
Vdc
Vdc
pf
pf
x 10
--
ps
dB
-4
(1) Pulse Test: PW = 300 µs, Duty Cycle = 2.0%
Datasheet# MSC0281A 5/19/97
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