Microsemi Corporation 2N2907ADIE Datasheet

2N2907ADIE

PHYSICAL DIMENSIONS

V: Chip (Waffle Pack, 100

% visually inspected) X: Other

Suffix S

: Capable of S-Level equivalent applications

A Microsemi Company

580 Pleasant St. Phone: [phone]
Watertown, MA 02172 Fax: [phone]

DIE SPECIFICATION

SWITCHING TRANSISTOR
PNP SILICON

FEATURES:

n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

Vceo Collector-Emitter Voltage 60 Vdc
Vcbo Collector-Base Voltage 60 Vdc
Vebo Emitter-Base Voltage 5.0 Vdc
Ic Collector Current- Continuous 600 mAdc
Tj, Tstg Operating Junction & Storage -65 to +200 °C

Temperature Range

Packaging Options:

W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)

Metallization Options:

Standard: Al Top / Au Backside (No Dash #)
Dash 1: Al Top / TiPdAg Backside

Processing Options:

Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial

ORDERING INFORMATION:

PART #: 2N2907A_ _ - _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice. Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98

MSC0948.PDF

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Electrical Characteristics @ Tj = 25 °C

ON CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

Symbol Parameter Conditions Min Max Unit

OFF CHARACTERISTICS

V(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc 60 Vdc
V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc 5 Vdc
V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed 60 Vdc
ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc 50 nAdc
ICBO1 Collector to Base Cutoff Current Bias Cond. D, VCB=50Vdc 10 nAdc
IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc 50 nAdc

hFE1 Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc 75
hFE2 Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc 100 450
hFE3 Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc 100
hFE4 Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed 100 300
hFE5 Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed 50
VCE(sat)1 Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.4 Vdc
VCE(sat)2 Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 1.6 Vdc
VBE(sat)1 Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.6 1.3 Vdc
VBE(sat)2 Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 2.6 Vdc

hfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz 100
/hfe/ Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2

Current Transfer Ratio
Cobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz 8 pF
Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 30 pF

ton Saturated Turn-on Time As defined in 19500/291 Figure 7 45 nS
toff Saturated Turn-off Time As defined in 19500/291 Figure 8 300 nS

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