Microsemi Corporation 2N2880 Datasheet
SYMBOL
CHARACTERISTIC
VALUE
UNITS
30WW
FEATURES:
APPLICATIONS:
7516 Central Industrial Drive
Riviera Beach, Florida
DESCRIPTION:DESCRIPTION:
Indicates MIL-S-19500/315
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
• Fast Switching
• High Frequency Switching and Amplifying
2N2880
5 Amp, 80V,
Planar, NPN
• High Reliability
• Greater Gain Stability
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
Power Transistors
JAN,JTX,JANTXV,JANS
TO-59
V
* Collector-Base Voltage 110 V
CBO
V
* Collector-Emitter Voltage 80 V
CEO
V
* Emitter-Base Voltage 8 V
EBO
IC* Continuous Collector Current 5 A
IB* Continuous Base Current 0.5 A
T
* Storage Temperature -65 to 200
STG
TJ* Operating Junction Temperature -65 to 200
*
MSC0950A.DOC 11-09-98
*
PT*
θθ JC
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
TA = 25°°C
TC = 100°°C
Thermal Resistance
Junction to Case
230
2
3.33
°°C
°°C
°°C
°°C/W
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
BV
CBO
Collector-Base Voltage
*
IC = 10 µAdc, Cond. D
2N2880
VALUE
Min.
110 ---- Vdc
Max.
Units
BV
CEO
Collector-Emitter Voltage
*
IC = 0.1 Adc, Cond. D 80 ---- Vdc
(Note 1)
BV
* Emitter-Base Voltage
EBO
I
CEO
Collector-Emitter
*
IE = 10 µAdc, Cond. D
VCE = 60 Vdc, Cond. D
Cutoff Current
I
* Collector-Emitter
CEX
Cutoff Current
*
Collector-Base
I
CBO
Cutoff Current
*
Emitter-Base
I
EBO
VCE = 110 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 80 Vdc, VEB = 0.5 Vdc, Cond. A, TA = 150°°C
VCB = 80 Vdc, Cond. D
VCB = 60 Vdc, Cond. D, TA = - 150°°C
VEB = 6 Vdc, Cond. D ---- 0.2
Cutoff Current
hFE* DC Current Gain
(Note 1)
IC = 50 mAdc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc, TA = - 55°°C
hFE* AC Current Gain
V
*
CE(sat)
Collector Saturation
Voltage (Note 1)
V
BE(sat)*
V
BE(on)
Base Saturation
Voltage (Note 1)
Base On-Voltage
*
IC = 50 mAdc, VCE = 5 Vdc, f = èè KHz
IC = 1 Adc, IB = 0.1 Adc
IC = 5 Adc, IB = 0.5 Adc
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, VCE = 2 Vdc
(Note 1)
f
*
T
C
ob
Gain-Bandwidth Product
Output Capacitance
*
td* Delay Time IC = 1 A, I
tr* Rise Time
ts* Storage Time
tf* Fall Time
I
S/B
Forward-Biased
*
Second Breakdown
E
S/B
Clamped Reverse-
*
Biased Second
IC = 1 Adc, VCE = 10 Vdc, f = 10 MHz
VCB = 10 Vdc, 1E = 0, f = 1 MHz
B
IC = 1 A, I
IC = 1 A, I
IC = 1 A, I
B
B
B
VCE = 20 Vdc, t = 10 Sec, TC = 100°°C
VCE = 80 Vdc, t = 10 Sec, TC = 100°°C
IC = 5 A, L = 1 mH, V
IB = 0.5 A, R
Breakdown
E
S/B
Unclamped Reverse-
*
Biased Second
Breakdown
IC = 5 A, L = 1 mH, Base Open
IC = 1.6 A, L = 10 mH, Base Open
Note 1: Pulse Test: PW = 300µµs, Duty Cycle ≤≤ 2%.
* Indicates MIL-S-19500/315
8 ---- Vdc
---- 20
----
----
----
----
40
40
15
15
40 120 ----
----
----
---- 1.2 Vdc
---- 1.2 Vdc
30 120 MHz
---- 150 pf
= I
= 100 ma ---- 60 ns
1
2
B
= IB2 = 100 ma
1
= I
= 100 ma
1,
2
B
= IB2 = 100 ma
1
---- 300 ns
---- 1.7
---- 300 ns
1.5
80
12.5 ---- mj
BB2
Clamp
= 20ΩΩ, V
= 110 V, TC = 100°°C
= -3.0V
BB2
12.5
12.8
1.0
50
0.2
10
120
120
----
----
0.25
1.5
----
----
----
----
µAdc
µAdc
µA
µAdc
----
µAdc
----
----
----
----
Vdc
Vdc
µµs
Adc
mAdc
mj
mj
MSC0950A.DOC 11-09-98
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