Microsemi Corporation 2N2857 Datasheet

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS

Features

• Silicon NPN, To-72 packaged UHF Transistor

• 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC

• Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz

2N2857

2

1

4

TO-72

1. Emitter

2. Base

3

3. Collector

4. Case

DESCRIPTION:

Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer
applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol Parameter Value Unit

V

CEO

V

CBO

V

EBO

I

C

Collector-Emitter Voltage 15 Vdc

Collector-Base Voltage 30 Vdc

Emitter-Base Voltage 2.5 Vdc

Collector Current 40 mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC
Derate above 25ºC

200

1.14

mWatts
mW/ ºC

MSC1066.PDF 3-10-99

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC
(off)

Symbol Test Conditions Value

BVCEO Collector-Emitter Breakdown Voltage

(IC = 3.0 mAdc, IB = 0) 15 - - Vdc

BVCBO Collector-Base Breakdown Voltage

(IC=1.0 µAdc, IE=0)

BVEBO Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

ICBO Collector Cutoff Current

(VCE = 15 Vdc, IE = 0 Vdc) - - .01

(on)

HFE DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc) 30 - 150

2N2857

Min. Typ. Max. Unit

30 - - Vdc

2.5 - -

Vdc

µA

DYNAMIC

Symbol Test Conditions Value

Min. Typ. Max. Unit

f

T

NF Noise Figure (50 Ohms)

MSC1066.PDF 3-10-99

Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 1.6 - GHz

(IC = 1.5 mAdc, VCE = 6 Vdc, f = 500 MHz) 5.5 dB