Microsemi Corporation 2N2222A Datasheet

2N2222A DIE

PHYSICAL DIMENSIONS

V: Chip (Waffle Pack, 100

% visually inspected) X: Other

Suffix S

: Capable of S-Level equivalent applications

A Microsemi Company

580 Pleasant St. Phone: [phone]
Watertown, MA 02172 Fax: [phone]

DIE SPECIFICATION

SWITCHING TRANSISTOR
NPN SILICON

FEATURES:

n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .3V @ IC = 150 mAdc

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

Vceo Collector-Emitter Voltage 50 Vdc
Vcbo Collector-Base Voltage 75 Vdc
Vebo Emitter-Base Voltage 6.0 Vdc
Ic Collector Current- Continuous 800 mAdc
Tj, Tstg Operating Junction & Storage -65 to +200 °C

Temperature Range

Packaging Options:

W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)

Metallization Options:

Standard: Al Top / Au Backside (No Dash #)
Dash 1: Al Top / TiPdAg Backside

Processing Options:

Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial

ORDERING INFORMATION:

PART #: 2N2222A_ _ - _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice. Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98

MSC0949.PDF

1

Electrical Characteristics @ Tj = 25 °C

ON CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

Symbol Parameter Conditions Min Max Unit

OFF CHARACTERISTICS

V(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc 75 Vdc
V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc 6 Vdc
V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed 50 Vdc
ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc 50 nAdc
ICBO1 Collector to Base Cutoff Current Bias Cond. D, VCB=60Vdc 10 nAdc
IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc 10 nAdc

hFE1 Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc 50
hFE2 Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc 75 325
hFE3 Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc 100
hFE4 Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed 100 300
hFE5 Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed 30
VCE(sat)1 Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.3 Vdc
VCE(sat)2 Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 1 Vdc
VBE(sat)1 Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.6 1.2 Vdc
VBE(sat)2 Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 2 Vdc

hfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz 50
/hfe/ Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2.5

Current Transfer Ratio
Cobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz 8 pF
Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 25 pF

ton Saturated Turn-on Time As defined in 19500/255 Figure 8 45 nS
toff Saturated Turn-off Time As defined in 19500/255 Figure 9 300 nS

2