Microsemi Corporation 2N2219A Datasheet
FeaturesFeatures
• Meets MIL 19500 /251
• Collector - Base Voltage 75 V
• Collector - Current 800 mA
• Medium Current, Bipolar Transistor
• Available in TO-5
TO-39
580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
2N2219A
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
SMALL SIGNAL
BIPOLAR
NPN SILICON
Maximum Ratings
RATING SYMBOL VALUE UNIT
Collector - Emitter Voltage V
Collector - Base Voltage V
Emitter - Base Voltage V
Collector Current - Continuous I
Total Device Dissipation @ TA = 25 °°C
Derate above 25 °°C
Total Device Dissipation @ TC = 25 °°C
Derate above 25 °°C
Operating Junction&Storage Temperature Range TJ, T
P
P
CEO
CBO
EBO
C
D
D
stg
- 55 to +200
50 Vdc
75 Vdc
6 Vdc
800 mAdc
0.8 WATTS
4.6
1.0 WATTS
17.0
mW/°°C
mW/°°C
°°C
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
MSCO934A 10-15-98 DSW2N2219A <-> (34724)
Rθθ JA
Rθθ JC
217
59
°°C/W
°°C/W
2N2219A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC SYMBOL MIN MAX UNIT
Collector - Emitter Breakdown Voltage (1) V(BR)
( IC = 10 mA dc, IB = 0 ) 50 Vdc
Collector - Base Breakdown Voltage V(BR)
( IC = 10 µµAdc, IE = 0 )
Emitter - Base Breakdown Voltage V(BR)
( IE = 10 µµAdc, IC = 0 )
Collector - Emitter Cutoff Current I
( VCE = 50 Vdc ) 10 nAdc
Collector - Base Cutoff Current I
( VCB = 60 Vdc, IE = 0 ) 10 nAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °°C )
Emitter - Base Cutoff Current I
( VEB = 4 Vdc ) 10 nAdc
( VEB = 6 Vdc ) 10
ON CHARACTERISTIC SYMBOL MIN MAX UNIT
DC Current Gain h
( IC = 0.1 mA dc, V
( IC = 1 mA dc, V
( IC = 10 mA dc, V
( IC = 150 mA dc, V
( IC = 500 mA dc, V
( IC = 10 mA dc, V
= 10 Vdc ) (1) 50
CE
= 10 Vdc ) (1) 75 325
CE
= 10 Vdc ) (1) 100
CE
= 10 Vdc ) (1) 100 300
CE
= 10 Vdc ) (1) 30
CE
= 10 Vdc, TJ = -55°°C ) (1)
CE
Collector - Emitter Saturation Voltage V
( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.3 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 1.0 Vdc
Base - Emitter Saturation Voltage V
( IC = 150 mAdc, IB = 15 mAdc ) (1) 0.6 1.2 Vdc
( IC = 500 mAdc, IB = 50 mAdc ) (1) 2.0 Vdc
CES
CBO
EBO
FE
CE(sat)
BE(sat)
CEO
CBO
EBO
75 Vdc
6 Vdc
10
µµAdc
µµAdc
35
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2%
MSCO934A 10-15-98 DSW2N2219A <-> (34724)
2N2219A
Electrical Characteristics (TA = 25°C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT
Output Capacitance C
( V
= 10 Vdc, IE = 0, 100kHz ≤≤ f ≤≤ 1 MHz )
CB
Input Capacitance C
( V
= 0.5 Vdc, IC = 0, 100kHz ≤≤ f ≤≤ 1 MHz )
EB
SWITCHING CHARACTERISTICS SYMBOL MIN MAX UNIT
Turn - On Time t
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 =15 mAdc) ( See FIGURE 1 ) 35 ns
Turn - Off Time t
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) 300 ns
Small - Signal AC Characteristics (TA = 25°C)
LOW FREQUENCY SYMBOL MIN MAX UNIT
Common - Emitter Forward Current Transfer Ratio h
( IC = 1 mA, VCE = 10 V, f = 1kHz ) 75
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio |hfe|
( IC = 20 mA, VCE = 20 V, f = 100 MHz ) 2.5 12
obo
8.0 pF
ibo
25 pF
on
off
fe
S p i c e M o d e l (based upon typical device characteristics)
Q2N2219A NPN ( IS = 21.2f XTI =
+ NE = 3.07 IKF =
3.0 EG = 1.11 VAF = 190.7 BF = 200.2 ISE = 35.39
0.5411 NK = 0.5465 XTB = 1.5 BR = 1.0 ISC = 31.3 p
* 1
+ NC = 1.51 IKR = 23.14m RC = 0.4055 CJC = 19.4p MJC = 0.3333 VJC = 0.75
+ FC = 0.5 CJE = 29.6p MJE = 0.3333 VJE = 0.75 TR = 323.0 n TF = 562.6 p
+ ITF = 1.0 XTF = 0.0 VTF = 10.0 )
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.
MSCO934A 10-15-98 DSW2N2219A <-> (34724)
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