Microsemi Corporation 2N2151 Datasheet
SYMBOL
CHARACTERISTIC
VALUE
UNITS
30WW
FEATURES:
APPLICATIONS:
7516 Central Industrial Drive
Riviera Beach, Florida
DESCRIPTION:DESCRIPTION:
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
• Fast Switching
• High Frequency Switching and Amplifying
2N2151
5 Amp, 100V,
Planar, NPN
• High Reliability
• Greater Gain Stability
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
Power Transistors
JAN, JANTX
TO-59
V
* Collector-Base Voltage 150 V
CBO
V
* Collector-Emitter Voltage 100 V
CEO
V
* Emitter-Base Voltage 8 V
EBO
IC* Peak Collector Current 10 A
IC* Continuous Collector Current 5 A
IB* Continuous Base Current 2 A
T
* Storage Temperature -65 to 200
STG
TJ* Operating Junction Temperature -65 to 200
*
PT*
θθ JC
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
TA = 25°°C
TC = 100°°C
Thermal Resistance
Junction to Case
230
2
3.33
°°C
°°C
°°C
°°C/W
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
Min.
Max
(25°°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC TEST CONDITIONS
2N2151
VALUE
Units
BV
BV
CBO
CEO
Collector-Base Voltage
*
Collector-Emitter
*
Voltage (Note 1)
BV
I
EBO
CEO
Emitter-Base Voltage
*
Collector-Emitter
*
Cutoff Current
I
CEX
Collector-Emitter
*
Cutoff Current
I
CBO
Collector-Base
*
Cutoff Current
hFE*
DC Current Gain
(Note 1)
hFE* AC Current Gain
V
CE(sat)
Collector Saturation
*
Voltage (Note 1)
V
BE(sat)*
Base Saturation
Voltage (Note 1)
V
BE(on)
Base On-Voltage
*
(Note 1)
fT*
Gain-Bandwidth
Product
Cob*
Output Capacitance
IC = 100 µAdc, Cond. D
IC = 50 mAdc, Cond. D
IE = 2 µAdc, Cond. D
VCE = 120 Vdc Cond. D
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A TA = 150°°C
VCB = 120 Vdc, Cond. D
IC = 1 Adc, VCE = 5 Vdc
IC = 0.5 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 30 Vdc, f = 1 KHz
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, VCE = 2 Vdc
IC = 1 Adc, VCE = 30 Vdc, f = 10 MHz
VCB = 20 Vdc, 1E = 0, f = 1 MHz
150 ---- Vdc
100 ---- Vdc
8 ---- Vdc
---- 5
----
----
100
---- 5
40
40
40
120
120
----
µAdc
5
µAdc
µA
µAdc
----
----
----
40 160 ----
---- 1.0 Vdc
---- 1.2 Vdc
---- 1.2 Vdc
10 70 MHz
---- 160 pf
Note 1: Pulse Test: PW = 300µµs, Duty Cycle ≤≤ 2%.
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
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