Microsemi 2N1613 User Manual
120101
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
2N718A
2N1613
2N1613L
MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C
2N1613, L
@ TC = +250C
2N1613, L
Operating & Storage Junction Temperature Range
(1)
2N718A
(2)
2N718A
V
CEO
V
CBO
V
EBO
IC
PT
T
T
,
J
stg
30 Vdc
75 Vdc
7.0 Vdc
500 mAdc
0.5
0.8
1.8
3.0
-55 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
R
θJC
97
58
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, R
Collector-Base Cutoff Current
VCB= 60 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
= 10 Ω
BE
V
(BR)CEO
V
(BR)CER
I
CBO
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
W
0
C/W
Qualified Level
JAN
JANTX
JANTXV
TO-18 (TO-206AA)*
2N718A
TO-39 (TO-205AD)*
2N1613
TO-5*
2N1613L
*See appendix A for package
outline
30
50
10
10
Vdc
Vdc
ηAdc
ηAdc
Page 1 of 2
120101
2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
= 0.1 mAdc, V
C
I
= 10 mAdc, V
C
I
= 150 mAdc, V
C
= 10 Vdc
CE
= 10 Vdc
CE
= 10 Vdc
CE
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
I
= 50 mAdc, V
C
= 10 Vdc, f = 20 MHz
CE
Small-Signal Forward Current Transfer Ratio
I
= 1.0 mAdc, V
C
I
= 5.0 mAdc, V
C
= 5.0 Vdc, f = 1.0 kHz
CE
= 10 Vdc, f = 1.0 kHz
CE
Small-Signal Short Circuit Input Impedance
I
= 5.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz
CB
Small-Signal Short Circuit Output Admittance
I
= 5.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz
CB
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 1 of MIL-PRF-19500/181)
(3)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
hFE
V
CE(sat)
V
BE(sat)
hfe
hfe
hib
hob
C
obo
t
on + toff
20
35
40
120
20
1.5
1.3
3.0
30
35
100
150
4.0 8.0
1.0
25
30
Vdc
Vdc
Ω
ηΩ
pF
ηs
Page 2 of 2
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