Microsemi Corporation 28M0 Datasheet

NOTE 2: Pulsed: PW = 100ms max.; duty cycle

<

20%

28M0

A Microsemi Company

580 Pleasant St. Phone: [phone]
Watertown, MA 02472 Fax: [phone]

DIE SPECIFICATION

60V 300mA
MONOLITHIC DIODE ARRAY

FEATURES:

• TWO EIGHT DIODE CORE DRIVER

.061"

J

J J J

• trr < 20 ns

• RUGGED AIR-ISOLATED CONSTRUCTION

• LOW REVERSE LEAKAGE CURRENT

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc
IO *1 Continuous Forward Current 300 mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc
Top Operating Junction Temperature Range -65 to +150 °C
Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode

A C

J JJJ

C A

Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified

Symbol Parameter Conditions Min Max Unit

BV1 Breakdown Voltage IR = 10uAdc 60
Vf1 Forward Voltage IF = 100mAdc *1 1 Vdc
Vf2 Forward Voltage IF = 500mAdc *1 1.5 Vdc
IR1 Reverse Current VR = 40 Vdc 0.1 uAdc
Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz 8.0 pF
tfr Forward Recovery Time IF = 500mAdc 40 ns
trr Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms 20 ns

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge

Packaging Options:

W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack) B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other

Processing Options:

Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications

.054"

Metallization Options:

Standard: Al Top / Au Backside (No Dash #)

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.

MSC1025.PDF Rev - 12/3/98

ORDERING INFORMATION

PART #: 28M0_ _- _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option