Microsemi Corporation 1N914 Datasheet
Silicon Switching Diode DO-35 Glass Package
1N914
or
Applications
1N914-1
Used in general purpose applications, where performance and switching
speed are important.
Features
Six sigma quality
DO-35 Glass Package
0.458-0.558 mm
Lead Dia.
0.018-0.022"
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
Dia.
0.06-0.09"
1.53-2.28 mm
Full approval to Mil-S-19500/116
Available up to JANTXV levels
"S" level screening available to SCDs
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 100 (Min.) Volts
Average Rectified Current I
Continuous Forward Current I
Peak Surge Current (t
Power Dissipation @ T
= 1 sec.) I
peak
=50 oC, L = 3/8" from body P
L
Storage & Operating Temperature Range T
Avg
Fdc
peak
tot
St & Op
75 mAmps
300 mAmps
0.5 Amp
250 mWatts
-65 to +200
o
C
Electrical Characteristics @ 25
Breakdown Voltage @ Ir = 0.1 mA PIV 100 (Min) Volts
Reverse Leakage Current @ V
Reverse Leakage (Vr =20 V, 150
Reverse Leakage Current @ V
Capacitance @ V
= 0 V, f = 1mHz C
R
Reverse Recovery Time (note 1) t
Forward Recovery Time (note 2) V
Note 1: I
Note 2: I
= 10 mA, RL = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA
F
= 50 mA dc
F
*UNLESS OTHERWISE SPECIFIED
o
C* Symbol Absolute Limits Unit
= 20 V I
R
o
C) I
= 75 V I
R
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
R
R
R
T
rr
fr
0.025 (Max) µA
50 (Max) µA
5.0 (Max) µA
4.0 (Max) pF
4.0 (Max) nSecs
2.5 (Max) Volts
Loading...