Microsemi Corporation 1N6816R, 1N6816 Datasheet

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256

Features

• Tungsten schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, 1N6816) and reverse

polarity (strap-to-cathode: 1N6816R)

MSASC25W45K

(1N6816)

MSASC25W45KR

(1N6816R)

45 Volts

25 Amps

LOW LEAKAGE

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION SYMBOL MAX. UNIT

Peak Repetitive Reverse Voltage V Working Peak Reverse Voltage V DC Blocking Voltage V Average Rectified Forward Current, Tc≤ 145°C derating, forward current, Tc≥ 145°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz Junction Temperature Range T Storage Temperature Range T Thermal Resistance, Junction to Case: 1N6816 1N6816R

RRM

RWM

F(ave)

dIF/dT (3.3)

FSM

RRM

stg

SCHOTTKY DIODE

45 Volts 45 Volts 45 Volts 25 Amps

Amps/°C

125 Amps

2 Amp

-55 to +175

1.25

1.35

°C °C

°C/W

Datasheet# MSC1033A

Mechanical Outline

ThinKey™2

MSASC25W45K (1N6816)

MSASC25W45KR (1N6816R)

Electrical Parameters

DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT

Reverse (Leakage) IR Current IR Forward Voltage VF1

pulse test, VF2

pw= 300 µs

d/c≤ 2%

Junction Capacitance Cj1 VR= 10 Vdc 525 600 pF Breakdown Voltage BVR

125

VF3 VF4 VF5 VF6

Cj2 VR= 5 Vdc 725 pF

VR= 45 Vdc, Tc= 25°C VR= 45 Vdc, Tc= 125°C IF= 5A, Tc= 25°C IF= 10A, Tc= 25°C IF= 20A, Tc= 25°C IF= 50A, Tc= 25°C IF= 10A, Tc= -55°C IF= 10A, Tc= 125°C

IR= 1 mA, Tc= 25°C IR= 1 mA, Tc= -55°C

45 50 V

5 300

1.5 10 mA 540 600 mV 590 675 mV 680 775 mV 850 - mV 680 775 mV 500 - mV

55 V

µA

Datasheet# MSC1033A