Microsemi Corporation 1N6660R, 1N6660 Datasheet

A Microsemi Company

580 PLEASANT ST.
WATERTOWN, MA 02172
PHONE: [phone]
FAX: [phone]

Features

• Low Reverse Leakage

• Low Forward Voltage Drop

• Guard Ring for Overvoltage Protection

• Isolated Hermetically Sealed Power Package

• Ceramic Seals for Improved Hermeticity

• Custom Lead Forming Available

• Eutectic Die Attach

• 150οC Operating Temperature

• Space Level Screening Available

• Available in TO-254Z Packaging

1N6660

1N6660R

MIL -S-19500/608

30 Amp / 45 VOLTS

COMMON CATHODE

OR

COMMON ANODE

SCHOTTKY RECTIFIER

Maximum Ratings (per diode)

Peak Repetitive Reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Forward Current, 25°C
Peak Surge Forward Current @

tp = 8.3 ms, half sinewave,

Io = 0; V

Peak Reverse Surge Current @

tp = 30µs, V

L = 260 µH

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to

Ambient

Operating Junction Temperature

Storage Temperature

RM

RSM =

= 0

54 V min,

V

RWM

V

RRM

V

R

I

O

I

FSM

I

RRM

RΘjc 1.65 °C/W
RΘja 40°C/W

Tj

Tstg

Electrical Characteristics per diode @ 25°°C Unless Otherwise Specified

Parameter Symbol Typical MA Test Conditions

Maximum
Instantaneous
Forward
Voltage

Maximum DC
Reverse
Current At
Rated DC
Blocking
Voltage
Junction
Capacitance

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

V

Cj

F

I

R

50 µA

0.55V

0.75V

1.0V

0.80V

1 mA
40 mA

2000

pF

IF = 5 A; TJ = 25°C*
IF = 15 A; TJ = 25°C*
IF = 30 A; TJ = 25°C*
IF = 15 A; TJ =- 55°C*
TJ = 25°C
TJ = 125°C

VR = 5 V, f = 1 MHz

45 V
45 V
45 V
15 A

Note 1

300 Apk

2 A

-65°C to
150°C

-65°C to
150°C

TO-254

Note:

1. Derate linearly @ 300mA/°C from TJ = TC = + 100°C to 150°C

MSC0268A.DOC
REVISED: 05-01-97