Microsemi Corporation 1N6511 Datasheet

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle

2%, 90us after leading edge

1N6511

A Microsemi Company

580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax: 617-924-1235

DIODE ARRAY PRODUCT SPECIFICATION

MONOLITHIC AIR ISOLATED DIODE ARRAY

FEATURES:

• HERMETIC CERAMIC PACKAGE

• Bv > 75V at 5uA

• Ir < 100nA at 40V

• C < 4.0 pF

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

VBR(R) *1 *2 Reverse Breakdown Voltage 75 Vdc IO *1 * 3 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc PT1 *4 Power Dissipation per Junction @ 25°C 400 mW PT2 *4 Power Dissipation per Package @ 25°C 600 mW Top Operating Junction Temperature Range -65 to +150 °C

.023 .014

.070 .030

.200

.125

.200 MAX

.785 MAX

.320 .290

.310 .220

Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%

.100 BSC

.060 .015

NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C

O-15

Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified

PACKAGE OUTLINE

Symbol Parameter Conditions Min Max Unit

Vf1 Forward Voltage If = 100mAdc *1 1 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc IR2 Reverse Current VR = 20 Vdc 25 nAdc Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz 4.0 pF tfr Forward Recovery Time If = 100mAdc 15 ns trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms 10 ns VF5 Forward Voltage Match If = 10 mA 5 mV

.015 .008

.005

.098

MIN

MAX

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice.

MSC1022.PDF Rev - 11/25/98