DIODE ARRAY SERIES
6/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue
∞ ∞
∞ ∞
∞ Garden Grove, CA 92841
2 (714) 898-8121
∞∞
∞∞
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) ....................................................
Output Current (I
O
), TC = 25°C
Continuous .................................................................
75V
300mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................
Lead Temperature (Soldering, 10 seconds) ..................
150°C
-65°C to 200°C
300°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-
Junction to Case, θ
JC
.................. 30°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
.............. 80°C/W
F Package (14 Pin):
Thermal Resistance-
Junction to Case, θ
JC
.................. 80°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
........... 140°C/W
F Package (16 Pin):
Thermal Resistance-
Junction to Case, θ
JC
.................. 70°C/W
Thermal Resistance-
Junction to Ambient, θ
JA
........... 115°C/W
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for
θJC are maximums for the limiting
thermal resistance of the package in a standard mounting configuration. The θ
JA
numbers are meant to be
guidelines for the thermal performance of the device/pcboard system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SG6100 ..........................................................-55°C to 150°C
SG6101 ..........................................................-55°C to 150°C
Note 3. Range over which the device is functional.
RECOMMENDED OPERATING CONDITIONS (Note 3)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of TA = 25°C for each diode. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
1.0
1.0
25
100
50
4
15
5
Min. Typ. Max.
V
V
V
nA
nA
µA
pf
ns
ns
IR = 5µA, Duty Cycle < 20%
Duty Cycle ≤ 2%, 300 µs pulse
I
F
= 100mA
I
F
= 10mA, TA = -55°C
V
R
= 20V
V
R
= 40V
V
R
= 40V, TA = 150°C
V
R
= 0V, f = 1MHz, Pin-to-pin
I
F
= 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
I
F
= IR = 200mA, irr = 20mA, RL = 100Ω
Breakdown Voltage (V
BR
)
Forward Voltage (V
F
)
Reverse Current (I
R
)
Capacitance (C)
(Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (trr)
(Note 4)
75
Test Conditions UnitsParameter
Note 4. The parameters, although guaranteed, are not 100% tested in production.
SG6511 ..........................................................-55°C to 150°C
SG6510 ..........................................................-55°C to 150°C
SG6100/SG6511
SG6010/SG6510