Microsemi 1N6469US, 1N6476US User Manual
查询1N6469US供应商
SCOTTSDALE DIVISION
1N6469US thru 1N6476US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MILPRF-19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in axial-leaded packages for thru-hole mounting by deleting
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also
offers numerous other TVS products to meet higher and lower peak pulse power and
voltage ratings in both through-hole and surface-mount packages.
IMPORTANT: For the most current data, consult
• High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
• Triple-layer passivation
• Internal “Category I” metallurgical bonds
• Voidless hermetically sealed glass package
• JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
• Further options for screening in accordance with MILPRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6469, MSP6476, etc.
• Axial-leaded equivalents are also available (see
separate data sheet for 1N6469 thru 1N6476)
• Operating & Storage Temperature: -55
• Peak Pulse Power at 25
(also see Figures 1,2 and 4)
• Impulse repetition rate (duty factor): 0.01%
• Forward Surge Current: 130 Amps@ 8.33 ms one-
half sine wave
• Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
• Steady-State Power: 3.0 W @ T
below and Figure 4)
• Thermal Resistance Junction to End Cap: 20.0
• Solder Temperatures: 260
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
FEATURES
MAXIMUM RATINGS
DESCRIPTION
MICROSEMI’s
o
o
C: 1500 Watts @ 10/1000 µs
o
C for 10 s (maximum)
C to +175oC
= 25oC (see note
A
website: http://www.microsemi.com
o
C/W
• Military and other high reliability transient protection
• Extremely robust construction
• Working Peak “Standoff” Voltage (V
• Available as 1500 W Peak Pulse Power (P
• ESD and EFT protection per IEC61000-4-2 and
• Secondary lightning protection per select levels in
• Square-end-cap terminals for easy mounting
• Nonsensitive to ESD per MIL-STD-750 Method
• Inherently radiation hard as described in Microsemi
• CASE: Hermetically sealed voidless hard glass
• TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 1100 mg
• See package dimensions on last page
is not exceeded.
J(MAX)
APPLICATIONS / BENEFITS
51.6 V
IEC61000-4-4 respectively
IEC61000-4-5
1020
MicroNote 050
MECHANICAL AND PACKAGING
with Tungsten slugs
over copper
APPEARANCE
WM
Package “G”
(or “D-5C”)
) from 5.0 to
)
PP
WWW.
Microsemi
. COM
1N6461 – 1N6468
1N6469 – 1N6476
Copyright 2004
11-01-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6469US thru 1N6476US
Voidless-Hermetically-Sealed Surface
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS
TYPE
Volts mAdc Vdc
1N6469US 5.6 50 5 500 9.0 945 167 -.03, +0.04
1N6470US 6.5 50 6 100 11.0 775 137 0.06
1N6471US 13.6 10 12 20 22.6 374 66 0.085
1N6472US 16.4 10 15 10 26.5 322 57 0.085
1N6473US 27.0 5 24 5 41.4 207 36.5 .096
1N6474US 33.0 1 30.5 5 47.5 181 32 .098
1N6475US 43.7 1 40.3 5 63.5 135 24 .101
1N6476US 54.0 1 51.6 5 78.5 107 19 .103
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I
(BR)
WORKING
PEAK
VOLTAGE
V
WM
MAX
LEAKAGE
CURRENT
I
D
µ
Adc
Mount Unidirectional Transient
Suppressors
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10/1000 µs
V(pk) A(pk) A(pk) %/oC
MAXIMUM
PEAK PULSE
CURRENT
I
PP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF. OF
V
(BR)
WWW.
Microsemi
. COM
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
V
C
PPP
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
SYMBOLS & DEFINITIONS
PP
.
GRAPHS
PP
Peak Value
IPP
) in percent of I
P
FIG. 1 – Non-repetive peak pulse power rating curve FIG. 2 Pulse wave form for exponential surge
NOTE: Peak power defined as peak voltage times peak current for 10/1000 µs
Copyright 2004
11-01-2004 REV A
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Microsemi
Scottsdale Division
Pulse current (I
Pulse time duration (tp) is
defined as that point where
I
decays to 50% of peak
P
value (IPP).
time (t) in milliseconds
Page 2
1N6461 – 1N6468
1N6469 – 1N6476
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