Microsemi Corporation 1N6100 Datasheet

VF5
Forward Voltage Match
If = 10 mA
5mV
1N6100
A Microsemi Company
580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
1
14
DIODE ARRAY
13
12
11
10
9
8
FEATURES:
HERMETIC CERAMIC PACKAGE
Ir < 100nA at 40V
C < 4.0 pF
Absolute Maximum Ratings:
2
3
4
5
6
7
Symbol Parameter Limit Unit
.019 .010
.280
MAX
.004
MIN
.006 .003
VBR(R) *1 *2 Reverse Breakdown Voltage 75 Vdc IO *1 * 3 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc PT1 *4 Power Dissipation per Junction @ 25°C 400 mW PT2 *4 Power Dissipation per Package @ 25°C 500 mW Top Operating Junction Temperature Range -65 to +150 °C Tstg Storage Temperature Range -65 to +200 °C
.280
MAX
NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C
Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified
.005 MIN
.050 BSC
.095 .030
PACKAGE OUTLINE
Symbol Parameter Conditions Min Max Unit
Vf1 Forward Voltage If = 100mAdc *1 1 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc IR2 Reverse Current VR = 20 Vdc 25 nAdc Ct Capacitance (pin to pin) VR = 0 Vdc; f = 1MHz 4.0 pF tfr Forward Recovery Time If = 100mAdc 15 ns trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms 10 ns
.370 .250
.260 .240
.370 .250
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice.
MSC1015.PDF Rev - 11/25/98
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