Microsemi Corporation 1N5811, 1N5809, 1N5807 Datasheet
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
R
F
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
7516 Central Industrial Drive
Riviera Beach, Florida
Chip Type: RA
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
FEATURES:
• Chip Outline Dimensions: 68 x 68 mils
• Chip Thickness: 8 to 12 mils
• Anode Metallization: Aluminum
• Metallization Thickness: 70,000ÃÃ Nominal
• Bonding Area: 42 x 42 mils Min.
• Back Metallization: Gold-3000ÃÃ Nominal
• Junction Passivated with Thermal Silicon Dioxide - Planar Design
• Backside Available with Solderable Ag Backside as JANHCF or
JANKCF
1N5807
1N5809
1N5811
JANHCE and JANKCE
JANHCF and JANKCF
6 AMPS
FAST RECOVERY
RECTIFIER CHIP
50 - 150 VOLTS
TYPE V
JANHCE1N5807 50V 60V 6.0A
JANHCE1N5809 100V 110V 6.0A
JANHCE1N58011 150V 160V 6.0A
JANKCE1N5807 50V 60V 6.0A
JANKCE1N5809 100V 110V 6.0A
JANKCE1N58011 150V 160V 6.0A
R
V
BR
I
Tj = 75°°C
O
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
Reverse Current
Rated VR, TC = 25°°C I
Reverse Current
Rated VR, TC = 100°°C
Forward Voltage Drop IF = 4A, TC = 25°°C V
Junction Capacitance @ VR = 10V
REVERSE RECOVERY CHARACTERISTICS:REVERSE RECOVERY CHARACTERISTICS:
Reverse Recovery Time
IF = 1A, IR = 1A, IRR = 0.1A
A
R
I
Cj 45 60 Pf
Trr 2.5 30 ns
.01 5 µµA
1.0 150 µµA
.84 .875 Volts
Forward Recovery Voltage @ 1A Tr = 8ns Vrr 1.5 2.2 V
Forward Recovery Time
IFM = 500 mA 15 ns
MSC1345.PDF 02-23-99
1N5807
1N5809
1N5811
JANHCE and JANKCE
JANHCF and JANKCF
GROUP A ELECTRICALSGROUP A ELECTRICALS
DRAWING NUMBER: MIL-S-19500/477 NUMBER:JANHCE1N5807/5809/5811 D00G1N5807/5809/5811KC
TEST # SYMBOL TEST CONDITIONS
1 SUBGROUP A2
2
3
4 V
5
6
7
8 SUBGROUP A3
9
10 V
11 V
12
13
14 SUBGROUP 4
15 trr IF = IR = 1.0 A IRM(REC) = 0.1 A dl/dt = 100 A\us (min)
16 C
17 V
18 tfr
V
V
(BR)1
V
(BR)2
FM1
FM2
I
R1
I
R2
FM3
FM4
J
FRM
IFM = 4.0 A
IFM = 6.0 A .925 V
VR = 50 V (5807)
VR = 100 V (5809)
VR = 150 V (5811)
I
= 100 µµA 1N5807
(BR)
1N5809
1N5811
VR = 50 V (5807)
VR = 100 V (5809) TA = + 100°°C
VR = 150 V (5811)
IFM = 4.0 A TA = + 100°°C
IFM = 4.0 A TA = - 65°°C
I
= 100 µµA TA = - 65°°C 1N5807
(BR)
1N5809
1N5811
VR = 10 V, f = 1 Mhz V
tr = 8 nS IFM = 500 mA 2.2 V
tp ≥≥ 20 nS tr 8 nS VFR = 1.1 x VF IFM = 500 mA(pk)
= 50 mV (P-P) (MAX) 60 pF
sig
MINIMUM MAXIMUM UNIT
.875 V
5.0 µµA
60
110
160
150 µµA
0.800 V
1.075 V
50
100
150
30 nS
15 nS
V
V
V
V
V
V
MSC1345.PDF 02-23-99
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