Microsemi Corporation 1N5806, 1N5804, 1N5802 Datasheet
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
R
F
CHARACTERISTIC
SYMBOL
TYPICAL
MAX.
UNITS
7516 Central Industrial Drive
Riviera Beach, Florida
Chip Type: RH
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
FEATURES:
• Chip Outline Dimensions: 41 x 41 mils
• Chip Thickness: 8 to 12 mils
• Anode Metallization: Aluminum
• Metallization Thickness: 50,000ÃÃ Nominal
• Bonding Area: 23 x 23 mils Min.
• Back Metallization: Gold
• Junction Passivated with Thermal Silicon Dioxide - Planar Design
• Backside Available with Solderable Ag Backside as JANHCF or
JANKCF
1N5802
1N5804
1N5806
JANHCE and JANKCE
JANHCF and JANKCF
2.5 AMPS
FAST RECOVERY
RECTIFIER CHIP
50 - 150 VOLTS
TYPE V
JANHCE1N5802 50V 60V 2.5A
JANHCE1N5804 100V 110V 2.5A
JANHCE1N5806 150V 160V 2.5A
JANKCE1N5802 50V 60V 2.5A
JANKCE1N5804 100V 110V 2.5A
JANKCE1N5806 150V 160V 2.5A
R
V
BR
I
Tj = 75°°C
O
ELECTRICAL CHARACTERIELECTRICAL CHARACTERISTICS:STICS:
Reverse Current
Rated VR, TC = 25°°C I
Reverse Current
Rated VR, TC = 100°°C
Forward Voltage Drop IF = 1A, TC = 25°°C V
Junction Capacitance @ VR = 10V
REVERSE RECOVERY CHARACTREVERSE RECOVERY CHARACTERISTICS:ERISTICS:
Reverse Recovery Time
IF = 0.5A, IR = 0.5A, IRR = 0.05A
A
R
I
Cj 15 25 Pf
Trr 20 25 ns
.01 1 µµA
1.0 50 µµA
.80 .875 Volts
Forward Recovery Voltage @ 1A Trr = 8ns Vrr 1.5 2.2 V
Forward Recovery Time
IFM = 250 mA 15 ns
MSC1344.PDF 02-23-99
1N5802
1N5804
1N5806
JANHCE and JANKCE
JANHCF and JANKCF
GROUP A ELECTRICALSGROUP A ELECTRICALS
DRAWING NUMBER: MIL-S-19500/477 NUMBER:JANKCE1N5802/5804/5806 D00G1N5802/5804/5806KC
TEST # SYMBOL TEST CONDITIONS
1 SUBGROUP A2
2
3
4 V
5
6
7
8 SUBGROUP A3
9
10 V
11 V
12
13
14 SUBGROUP 4
15 trr IF = IR = 0.5 A IRM(REC) = 0.05 A dl/dt = 65 A\us (min)
16 C
17 V
18 tfr
V
V
(BR)1
V
(BR)2
FM1
FM2
I
R1
I
R2
FM3
FM4
J
FRM
IFM = 1.0 A
IFM = 2.5 A .975 V
VR = 50 V (5802)
VR = 100 V (5804)
VR = 150 V (5806)
I
= 100 µµA 1N5802
(BR)
1N5804
1N5806
VR = 50 V (5802)
VR = 100 V (5804) TA = + 100°°C
VR = 150 V (5806)
IFM = 1.0 A TA = + 100°°C
IFM = 1.0 A TA = - 65°°C
I
= 100 µµA TA = - 65°°C 1N5802
(BR)
1N5804
1N5806
VR = 10 V, f = 1 Mhz V
tr = 8 nS IFM = 250 mA 2.2 V
tp ≥≥ 20 nS tr 8 nS VFR = 1.1 x VF IFM = 250 mA(pk)
= 50 mV (P-P) (MAX) 25 pF
sig
MINIMUM MAXIMUM UNIT
.875 V
1.0 µµA
60
110
160
50 µµA
0.800 V
1.075 V
50
100
150
25 nS
15 nS
V
V
V
V
V
V
MSC1344.PDF 02-23-99
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