Microsemi Corporation 1N5770 Datasheet

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle

<

2%, 90us after leading edge

1N5770

A Microsemi Company

580 Pleasant St. Phone: [phone]
Watertown, MA 02472 Fax: [phone]

DIODE ARRAY PRODUCT SPECIFICATION

MONOLITHIC AIR ISOLATED
DIODE ARRAY

FEATURES:

• HERMETIC CERAMIC PACKAGE

• Bv > 60V at 10uA

• Ir < 100nA at 40V

• C < 8.0 pF

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc
IO *1 * 3 Continuous Forward Current 300 mAdc
IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc
PT1 *4 Power Dissipation per Junction @ 25 °C 400 mW
PT2 *4 Power Dissipation per Package @ 25 °C 500 mW
Top Operating Junction Temperature Range -65 to +150 °C
Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 ° C
NOTE 4: Derate at 4.0mW/°C above +25 ° C

Electrical Characteristics (Per Diode) @

.290

MAX

.019
.010

5

6

2

3

4

7

8

9

.050

BSC

MAX

.005

MIN

.045

10

1: NOT CONNECTED

.006
.003

.280
MAX

.050
.005

.090
.030

.370
.240

.260
.240

.370
.240

25°C unless otherwise specified

Symbol Parameter Conditions Min Max Unit

Vf1 Forward Voltage If = 100mAdc *1 1 Vdc
Vf2 Forward Voltage If = 500mAdc *1 1.5 Vdc
IR1 Reverse Current VR = 40 Vdc 0.1 uAdc
Ct Capacitance (pin to pin) VR = 0 Vdc, f = 1 MHz 8.0 pF
tfr Forward Recovery Time If = 500mAdc 40 ns
trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms 20 ns

Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.

MSC1012.PDF Rev - 11/25/98

PACKAGE OUTLINE