Microsemi Corporation 1N5768 Datasheet

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle

2%, 90us after leading edge

1N5768

A Microsemi Company

580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax: 617-924-1235

DIODE ARRAY PRODUCT SPECIFICATION

MONOLITHIC AIR ISOLATED DIODE ARRAY

FEATURES:

• HERMETIC CERAMIC PACKAGE

• Bv > 60V at 10uA

• Ir < 100nA at 40V

• C < 4.0 pF

Absolute Maximum Ratings:

Symbol Parameter Limit Unit

VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc IO *1 * 3 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc PT1 *4 Power Dissipation per Junction @ 25°C 400 mW PT2 *4 Power Dissipation per Package @ 25°C 500 mW Top Operating Junction Temperature Range -65 to +150 °C Tstg Storage Temperature Range -65 to +200 °C

NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C

.290

MAX

.019 .010

.005

MIN

1: NOT CONNECTED

.006 .003

.280 MAX

.050 .005

.370 .240

.260 .240

.370 .240

Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified

Symbol Parameter Conditions Min Max Unit

Vf1 Forward Voltage If = 100mAdc *1 1 Vdc Vf2 Forward Voltage If = 500mAdc *1 1.5 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz 4.0 pF tfr Forward Recovery Time If = 500mAdc 40 ns trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms 20 ns

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice.

MSC1011.PDF Rev - 11/25/98

.050

BSC

.045

MAX

.090 .030

PACKAGE OUTLINE